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Ge content dependence of the infrared spectrum of interstitial oxygen in crystalline Si-Ge.

D WAUTERS and Paul Clauws (UGent)
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Chicago
WAUTERS, D, and Paul Clauws. 1997. “Ge Content Dependence of the Infrared Spectrum of Interstitial Oxygen in Crystalline Si-Ge.” DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3 (103-108 Part 1-3).
APA
WAUTERS, D., & Clauws, P. (1997). Ge content dependence of the infrared spectrum of interstitial oxygen in crystalline Si-Ge. DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, (103-108 Part 1-3).
Vancouver
1.
WAUTERS D, Clauws P. Ge content dependence of the infrared spectrum of interstitial oxygen in crystalline Si-Ge. DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3. 1997;(103-108 Part 1-3).
MLA
WAUTERS, D, and Paul Clauws. “Ge Content Dependence of the Infrared Spectrum of Interstitial Oxygen in Crystalline Si-Ge.” DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3 103-108 Part 1-3 (1997): n. pag. Print.
@article{177210,
  author       = {WAUTERS, D and Clauws, Paul},
  issn         = {0255-5476},
  journal      = {DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3},
  language     = {eng},
  number       = {103-108 Part 1-3},
  title        = {Ge content dependence of the infrared spectrum of interstitial oxygen in crystalline Si-Ge.},
  year         = {1997},
}

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