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Ge content dependence of the infrared spectrum of interstitial oxygen in crystalline Si-Ge.

D WAUTERS and Paul Clauws (1997) DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3.
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (original)
publication status
published
subject
journal title
DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3
issue
103-108 Part 1-3
Web of Science type
Article
Web of Science id
000072749500016
ISSN
0255-5476
language
English
UGent publication?
yes
classification
A1
id
177210
handle
http://hdl.handle.net/1854/LU-177210
date created
2004-01-14 13:41:00
date last changed
2016-12-19 15:38:58
@article{177210,
  author       = {WAUTERS, D and Clauws, Paul},
  issn         = {0255-5476},
  journal      = {DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3},
  language     = {eng},
  number       = {103-108 Part 1-3},
  title        = {Ge content dependence of the infrared spectrum of interstitial oxygen in crystalline Si-Ge.},
  year         = {1997},
}

Chicago
WAUTERS, D, and Paul Clauws. 1997. “Ge Content Dependence of the Infrared Spectrum of Interstitial Oxygen in Crystalline Si-Ge.” DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3 (103-108 Part 1-3).
APA
WAUTERS, D., & Clauws, P. (1997). Ge content dependence of the infrared spectrum of interstitial oxygen in crystalline Si-Ge. DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, (103-108 Part 1-3).
Vancouver
1.
WAUTERS D, Clauws P. Ge content dependence of the infrared spectrum of interstitial oxygen in crystalline Si-Ge. DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3. 1997;(103-108 Part 1-3).
MLA
WAUTERS, D, and Paul Clauws. “Ge Content Dependence of the Infrared Spectrum of Interstitial Oxygen in Crystalline Si-Ge.” DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3 103-108 Part 1-3 (1997): n. pag. Print.