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Chicago
MIDDLETON, PG, KP O’DONNELL, T BREITKOPF, H KALT, W VAN DER STRICHT, Ingrid Moerman, and Piet Demeester. 1997. “The Optical Linewidth of InGaN Light Emitting Diodes.” Materials Science and Engineering B-solid State Materials for Advanced Technology 50 (1-3): 285–288.
APA
MIDDLETON, P., O’DONNELL, K., BREITKOPF, T., KALT, H., VAN DER STRICHT, W., Moerman, I., & Demeester, P. (1997). The optical linewidth of InGaN light emitting diodes. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 50(1-3), 285–288.
Vancouver
1.
MIDDLETON P, O’DONNELL K, BREITKOPF T, KALT H, VAN DER STRICHT W, Moerman I, et al. The optical linewidth of InGaN light emitting diodes. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 1997;50(1-3):285–8.
MLA
MIDDLETON, PG, KP O’DONNELL, T BREITKOPF, et al. “The Optical Linewidth of InGaN Light Emitting Diodes.” MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 50.1-3 (1997): 285–288. Print.
@article{176882,
  author       = {MIDDLETON, PG and O'DONNELL, KP and BREITKOPF, T and KALT, H and VAN DER STRICHT, W and Moerman, Ingrid and Demeester, Piet},
  issn         = {0921-5107},
  journal      = {MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY},
  language     = {eng},
  number       = {1-3},
  pages        = {285--288},
  title        = {The optical linewidth of InGaN light emitting diodes.},
  volume       = {50},
  year         = {1997},
}

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