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A ballistic electron emission microscopy (BEEM)-investigation of the effects of reactive ion etching (RIE) and of chemical pretreatment on III-V semiconductors.

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Chicago
Vanmeirhaeghe, Roland, GM VANALME, Lieve Goubert, Felix Cardon, and Peter Van Daele. 1997. “A Ballistic Electron Emission Microscopy (BEEM)-investigation of the Effects of Reactive Ion Etching (RIE) and of Chemical Pretreatment on III-V Semiconductors.” Microscopy of Semiconducting Materials 157: 619–622.
APA
Vanmeirhaeghe, R., VANALME, G., Goubert, L., Cardon, F., & Van Daele, P. (1997). A ballistic electron emission microscopy (BEEM)-investigation of the effects of reactive ion etching (RIE) and of chemical pretreatment on III-V semiconductors. MICROSCOPY OF SEMICONDUCTING MATERIALS, 157, 619–622.
Vancouver
1.
Vanmeirhaeghe R, VANALME G, Goubert L, Cardon F, Van Daele P. A ballistic electron emission microscopy (BEEM)-investigation of the effects of reactive ion etching (RIE) and of chemical pretreatment on III-V semiconductors. MICROSCOPY OF SEMICONDUCTING MATERIALS. 1997;157:619–22.
MLA
Vanmeirhaeghe, Roland, GM VANALME, Lieve Goubert, et al. “A Ballistic Electron Emission Microscopy (BEEM)-investigation of the Effects of Reactive Ion Etching (RIE) and of Chemical Pretreatment on III-V Semiconductors.” MICROSCOPY OF SEMICONDUCTING MATERIALS 157 (1997): 619–622. Print.
@article{176642,
  author       = {Vanmeirhaeghe, Roland and VANALME, GM and Goubert, Lieve and Cardon, Felix and Van Daele, Peter},
  issn         = {0951-3248},
  journal      = {MICROSCOPY OF SEMICONDUCTING MATERIALS},
  language     = {eng},
  pages        = {619--622},
  title        = {A ballistic electron emission microscopy (BEEM)-investigation of the effects of reactive ion etching (RIE) and of chemical pretreatment on III-V semiconductors.},
  volume       = {157},
  year         = {1997},
}

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