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A ballistic electron emission microscopy (BEEM)-investigation of the effects of reactive ion etching (RIE) and of chemical pretreatment on III-V semiconductors.

Roland Vanmeirhaeghe, GM VANALME, Lieve Goubert, Felix Cardon and Peter Van Daele UGent (1997) MICROSCOPY OF SEMICONDUCTING MATERIALS. 157. p.619-622
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (original)
publication status
published
subject
journal title
MICROSCOPY OF SEMICONDUCTING MATERIALS
volume
157
pages
619-622 pages
Web of Science type
Article
Web of Science id
000071954600129
ISSN
0951-3248
language
English
UGent publication?
yes
classification
A1
id
176642
handle
http://hdl.handle.net/1854/LU-176642
date created
2004-01-14 13:40:00
date last changed
2016-12-19 15:38:58
@article{176642,
  author       = {Vanmeirhaeghe, Roland and VANALME, GM and Goubert, Lieve and Cardon, Felix and Van Daele, Peter},
  issn         = {0951-3248},
  journal      = {MICROSCOPY OF SEMICONDUCTING MATERIALS},
  language     = {eng},
  pages        = {619--622},
  title        = {A ballistic electron emission microscopy (BEEM)-investigation of the effects of reactive ion etching (RIE) and of chemical pretreatment on III-V semiconductors.},
  volume       = {157},
  year         = {1997},
}

Chicago
Vanmeirhaeghe, Roland, GM VANALME, Lieve Goubert, Felix Cardon, and Peter Van Daele. 1997. “A Ballistic Electron Emission Microscopy (BEEM)-investigation of the Effects of Reactive Ion Etching (RIE) and of Chemical Pretreatment on III-V Semiconductors.” Microscopy of Semiconducting Materials 157: 619–622.
APA
Vanmeirhaeghe, R., VANALME, G., Goubert, L., Cardon, F., & Van Daele, P. (1997). A ballistic electron emission microscopy (BEEM)-investigation of the effects of reactive ion etching (RIE) and of chemical pretreatment on III-V semiconductors. MICROSCOPY OF SEMICONDUCTING MATERIALS, 157, 619–622.
Vancouver
1.
Vanmeirhaeghe R, VANALME G, Goubert L, Cardon F, Van Daele P. A ballistic electron emission microscopy (BEEM)-investigation of the effects of reactive ion etching (RIE) and of chemical pretreatment on III-V semiconductors. MICROSCOPY OF SEMICONDUCTING MATERIALS. 1997;157:619–22.
MLA
Vanmeirhaeghe, Roland, GM VANALME, Lieve Goubert, et al. “A Ballistic Electron Emission Microscopy (BEEM)-investigation of the Effects of Reactive Ion Etching (RIE) and of Chemical Pretreatment on III-V Semiconductors.” MICROSCOPY OF SEMICONDUCTING MATERIALS 157 (1997): 619–622. Print.