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Hexagonal growth hillocks of MOCVD-grown GaN on (0001) sapphire.

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Chicago
MOHAMMED, A, C TRAGER-COWAN, PG MIDDLETON, KP O’DONNELL, W VAN DER STRICHT, Ingrid Moerman, and Piet Demeester. 1997. “Hexagonal Growth Hillocks of MOCVD-grown GaN on (0001) Sapphire.” Microscopy of Semiconducting Materials 157: 235–238.
APA
MOHAMMED, A., TRAGER-COWAN, C., MIDDLETON, P., O’DONNELL, K., VAN DER STRICHT, W., Moerman, I., & Demeester, P. (1997). Hexagonal growth hillocks of MOCVD-grown GaN on (0001) sapphire. MICROSCOPY OF SEMICONDUCTING MATERIALS, 157, 235–238.
Vancouver
1.
MOHAMMED A, TRAGER-COWAN C, MIDDLETON P, O’DONNELL K, VAN DER STRICHT W, Moerman I, et al. Hexagonal growth hillocks of MOCVD-grown GaN on (0001) sapphire. MICROSCOPY OF SEMICONDUCTING MATERIALS. 1997;157:235–8.
MLA
MOHAMMED, A, C TRAGER-COWAN, PG MIDDLETON, et al. “Hexagonal Growth Hillocks of MOCVD-grown GaN on (0001) Sapphire.” MICROSCOPY OF SEMICONDUCTING MATERIALS 157 (1997): 235–238. Print.
@article{176636,
  author       = {MOHAMMED, A and TRAGER-COWAN, C and MIDDLETON, PG and O'DONNELL, KP and VAN DER STRICHT, W and Moerman, Ingrid and Demeester, Piet},
  issn         = {0951-3248},
  journal      = {MICROSCOPY OF SEMICONDUCTING MATERIALS},
  language     = {eng},
  pages        = {235--238},
  title        = {Hexagonal growth hillocks of MOCVD-grown GaN on (0001) sapphire.},
  volume       = {157},
  year         = {1997},
}

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