Study of point defects in silicon by means of positron annihilation with core electrons
- Author
- J Kuriplach, Toon Van Hoecke (UGent) , B Van Waeyenberge, Charles Dauwe (UGent) , Danny Segers (UGent) , N Balcaen, AL Morales, MA Trauwaert, Jan Vanhellemont (UGent) and M Sob
- Organization
- Abstract
- High momentum parts of the momentum distribution of annihilation photons are examined both theoretically and experimentally for vacancies and vacancy-oxygen complexes in Si, Atomic relaxations in the neighbourhood of the defects are taken into account, Theoretical calculations are compared with measurements performed on undefected and electron irradiated Czochralski grown and float-zone Si samples.
- Keywords
- positron annihilation spectroscopy, momentum distribution, defects in Si, core electrons, VACANCY
Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-176556
- MLA
- Kuriplach, J., et al. “Study of Point Defects in Silicon by Means of Positron Annihilation with Core Electrons.” Materials Science Forum, edited by YC Jean et al., vol. 255, no. 2, Trans Tech, 1997, pp. 605–07, doi:10.4028/www.scientific.net/MSF.255-257.605.
- APA
- Kuriplach, J., Van Hoecke, T., Van Waeyenberge, B., Dauwe, C., Segers, D., Balcaen, N., … Sob, M. (1997). Study of point defects in silicon by means of positron annihilation with core electrons. Materials Science Forum, 255(2), 605–607. https://doi.org/10.4028/www.scientific.net/MSF.255-257.605
- Chicago author-date
- Kuriplach, J, Toon Van Hoecke, B Van Waeyenberge, Charles Dauwe, Danny Segers, N Balcaen, AL Morales, MA Trauwaert, Jan Vanhellemont, and M Sob. 1997. “Study of Point Defects in Silicon by Means of Positron Annihilation with Core Electrons.” Edited by YC Jean, M Eldrup, DM Schrader, and RN West. Materials Science Forum 255 (2): 605–7. https://doi.org/10.4028/www.scientific.net/MSF.255-257.605.
- Chicago author-date (all authors)
- Kuriplach, J, Toon Van Hoecke, B Van Waeyenberge, Charles Dauwe, Danny Segers, N Balcaen, AL Morales, MA Trauwaert, Jan Vanhellemont, and M Sob. 1997. “Study of Point Defects in Silicon by Means of Positron Annihilation with Core Electrons.” Ed by. YC Jean, M Eldrup, DM Schrader, and RN West. Materials Science Forum 255 (2): 605–607. doi:10.4028/www.scientific.net/MSF.255-257.605.
- Vancouver
- 1.Kuriplach J, Van Hoecke T, Van Waeyenberge B, Dauwe C, Segers D, Balcaen N, et al. Study of point defects in silicon by means of positron annihilation with core electrons. Jean Y, Eldrup M, Schrader D, West R, editors. Materials Science Forum. 1997;255(2):605–7.
- IEEE
- [1]J. Kuriplach et al., “Study of point defects in silicon by means of positron annihilation with core electrons,” Materials Science Forum, vol. 255, no. 2, pp. 605–607, 1997.
@article{176556,
abstract = {{High momentum parts of the momentum distribution of annihilation photons are examined both theoretically and experimentally for vacancies and vacancy-oxygen complexes in Si, Atomic relaxations in the neighbourhood of the defects are taken into account, Theoretical calculations are compared with measurements performed on undefected and electron irradiated Czochralski grown and float-zone Si samples.}},
author = {{Kuriplach, J and Van Hoecke, Toon and Van Waeyenberge, B and Dauwe, Charles and Segers, Danny and Balcaen, N and Morales, AL and Trauwaert, MA and Vanhellemont, Jan and Sob, M}},
editor = {{Jean, YC and Eldrup, M and Schrader, DM and West, RN}},
isbn = {{9780878497799}},
issn = {{0255-5476}},
journal = {{Materials Science Forum}},
keywords = {{positron annihilation spectroscopy,momentum distribution,defects in Si,core electrons,VACANCY}},
language = {{eng}},
location = {{Kansas City, MO, USA}},
number = {{2}},
pages = {{605--607}},
publisher = {{Trans Tech}},
title = {{Study of point defects in silicon by means of positron annihilation with core electrons}},
url = {{http://doi.org/10.4028/www.scientific.net/MSF.255-257.605}},
volume = {{255}},
year = {{1997}},
}
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