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Study of point defects in silicon by means of positron annihilation with core electrons

(1997) Materials Science Forum. 255(2). p.605-607
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Organization
Abstract
High momentum parts of the momentum distribution of annihilation photons are examined both theoretically and experimentally for vacancies and vacancy-oxygen complexes in Si, Atomic relaxations in the neighbourhood of the defects are taken into account, Theoretical calculations are compared with measurements performed on undefected and electron irradiated Czochralski grown and float-zone Si samples.
Keywords
positron annihilation spectroscopy, momentum distribution, defects in Si, core electrons, VACANCY

Citation

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Chicago
Kuriplach, J, Toon Van Hoecke, B Van Waeyenberge, Charles Dauwe, Danny Segers, N Balcaen, AL Morales, MA Trauwaert, Jan Vanhellemont, and M Sob. 1997. “Study of Point Defects in Silicon by Means of Positron Annihilation with Core Electrons.” Ed. YC Jean, M Eldrup, DM Schrader, and RN West. Materials Science Forum 255 (2): 605–607.
APA
Kuriplach, J., Van Hoecke, T., Van Waeyenberge, B., Dauwe, C., Segers, D., Balcaen, N., Morales, A., et al. (1997). Study of point defects in silicon by means of positron annihilation with core electrons. (Y. Jean, M. Eldrup, D. Schrader, & R. West, Eds.)Materials Science Forum, 255(2), 605–607. Presented at the 11th International conference on Positron Annihilation (ICPA-11).
Vancouver
1.
Kuriplach J, Van Hoecke T, Van Waeyenberge B, Dauwe C, Segers D, Balcaen N, et al. Study of point defects in silicon by means of positron annihilation with core electrons. Jean Y, Eldrup M, Schrader D, West R, editors. Materials Science Forum. Stafa-Zürich, Switzerland: Trans Tech; 1997;255(2):605–7.
MLA
Kuriplach, J, Toon Van Hoecke, B Van Waeyenberge, et al. “Study of Point Defects in Silicon by Means of Positron Annihilation with Core Electrons.” Ed. YC Jean et al. Materials Science Forum 255.2 (1997): 605–607. Print.
@article{176556,
  abstract     = {High momentum parts of the momentum distribution of annihilation photons are examined both theoretically and experimentally for vacancies and vacancy-oxygen complexes in Si, Atomic relaxations in the neighbourhood of the defects are taken into account, Theoretical calculations are compared with measurements performed on undefected and electron irradiated Czochralski grown and float-zone Si samples.},
  author       = {Kuriplach, J and Van Hoecke, Toon and Van Waeyenberge, B and Dauwe, Charles and Segers, Danny and Balcaen, N and Morales, AL and Trauwaert, MA and Vanhellemont, Jan and Sob, M},
  editor       = {Jean, YC and Eldrup, M and Schrader, DM and West, RN},
  isbn         = {9780878497799},
  issn         = {0255-5476},
  journal      = {Materials Science Forum},
  keywords     = {positron annihilation spectroscopy,momentum distribution,defects in Si,core electrons,VACANCY},
  language     = {eng},
  location     = {Kansas City, MO, USA},
  number       = {2},
  pages        = {605--607},
  publisher    = {Trans Tech},
  title        = {Study of point defects in silicon by means of positron annihilation with core electrons},
  url          = {http://dx.doi.org/10.4028/www.scientific.net/MSF.255-257.605},
  volume       = {255},
  year         = {1997},
}

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