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Accurate infrared spectroscopy determination of interstitial and precipitated oxygen in highly doped Czochralski-grown silicon.

(1999) REVIEW OF SCIENTIFIC INSTRUMENTS. 70(9). p.3661-3663
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Chicago
DE GRYSE, O, Paul Clauws, L ROSSOU, J VAN LANDUYT, and J VANHELLEMONT. 1999. “Accurate Infrared Spectroscopy Determination of Interstitial and Precipitated Oxygen in Highly Doped Czochralski-grown Silicon.” Review of Scientific Instruments 70 (9): 3661–3663.
APA
DE GRYSE, O, Clauws, P., ROSSOU, L., VAN LANDUYT, J., & VANHELLEMONT, J. (1999). Accurate infrared spectroscopy determination of interstitial and precipitated oxygen in highly doped Czochralski-grown silicon. REVIEW OF SCIENTIFIC INSTRUMENTS, 70(9), 3661–3663.
Vancouver
1.
DE GRYSE O, Clauws P, ROSSOU L, VAN LANDUYT J, VANHELLEMONT J. Accurate infrared spectroscopy determination of interstitial and precipitated oxygen in highly doped Czochralski-grown silicon. REVIEW OF SCIENTIFIC INSTRUMENTS. 1999;70(9):3661–3.
MLA
DE GRYSE, O, Paul Clauws, L ROSSOU, et al. “Accurate Infrared Spectroscopy Determination of Interstitial and Precipitated Oxygen in Highly Doped Czochralski-grown Silicon.” REVIEW OF SCIENTIFIC INSTRUMENTS 70.9 (1999): 3661–3663. Print.
@article{175654,
  author       = {DE GRYSE, O and Clauws, Paul and ROSSOU, L and VAN LANDUYT, J and VANHELLEMONT, J},
  issn         = {0034-6748},
  journal      = {REVIEW OF SCIENTIFIC INSTRUMENTS},
  language     = {eng},
  number       = {9},
  pages        = {3661--3663},
  title        = {Accurate infrared spectroscopy determination of interstitial and precipitated oxygen in highly doped Czochralski-grown silicon.},
  volume       = {70},
  year         = {1999},
}

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