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Spectroscopy and microscopy of localised and delocalised excitons in InGaN-based light emitting diodes and epilayers.

KP O'DONNELL, RW MARTIN, PG MIDDLETON, SC BAYLISS, I FLETCHER, W VAN DER STRICHT, Piet Demeester UGent and Ingrid Moerman UGent (1999) MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 59(1-3). p.288-291
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (original)
publication status
published
subject
journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
Mater. Sci. Eng. B-Solid State Mater. Adv. Technol.
volume
59
issue
1-3
pages
288-291 pages
Web of Science type
Article
Web of Science id
000080689000062
ISSN
0921-5107
language
English
UGent publication?
yes
classification
A1
id
174527
handle
http://hdl.handle.net/1854/LU-174527
date created
2004-01-14 13:40:00
date last changed
2016-12-19 15:38:42
@article{174527,
  author       = {O'DONNELL, KP and MARTIN, RW and MIDDLETON, PG and BAYLISS, SC and FLETCHER, I and VAN DER STRICHT, W and Demeester, Piet and Moerman, Ingrid},
  issn         = {0921-5107},
  journal      = {MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY},
  language     = {eng},
  number       = {1-3},
  pages        = {288--291},
  title        = {Spectroscopy and microscopy of localised and delocalised excitons in InGaN-based light emitting diodes and epilayers.},
  volume       = {59},
  year         = {1999},
}

Chicago
O’DONNELL, KP, RW MARTIN, PG MIDDLETON, SC BAYLISS, I FLETCHER, W VAN DER STRICHT, Piet Demeester, and Ingrid Moerman. 1999. “Spectroscopy and Microscopy of Localised and Delocalised Excitons in InGaN-based Light Emitting Diodes and Epilayers.” Materials Science and Engineering B-solid State Materials for Advanced Technology 59 (1-3): 288–291.
APA
O’DONNELL, K., MARTIN, R., MIDDLETON, P., BAYLISS, S., FLETCHER, I., VAN DER STRICHT, W., Demeester, P., et al. (1999). Spectroscopy and microscopy of localised and delocalised excitons in InGaN-based light emitting diodes and epilayers. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 59(1-3), 288–291.
Vancouver
1.
O’DONNELL K, MARTIN R, MIDDLETON P, BAYLISS S, FLETCHER I, VAN DER STRICHT W, et al. Spectroscopy and microscopy of localised and delocalised excitons in InGaN-based light emitting diodes and epilayers. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 1999;59(1-3):288–91.
MLA
O’DONNELL, KP, RW MARTIN, PG MIDDLETON, et al. “Spectroscopy and Microscopy of Localised and Delocalised Excitons in InGaN-based Light Emitting Diodes and Epilayers.” MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 59.1-3 (1999): 288–291. Print.