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Electrochemical and etching behavior of InP and In0.53Ga0.47As in alkaline hypobromite solutions

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MLA
Theuwis, Antoon, and Walter Gomes. “Electrochemical and Etching Behavior of InP and In0.53Ga0.47As in Alkaline Hypobromite Solutions.” JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 146, no. 5, 1999, pp. 1903–09.
APA
Theuwis, A., & Gomes, W. (1999). Electrochemical and etching behavior of InP and In0.53Ga0.47As in alkaline hypobromite solutions. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(5), 1903–1909.
Chicago author-date
Theuwis, Antoon, and Walter Gomes. 1999. “Electrochemical and Etching Behavior of InP and In0.53Ga0.47As in Alkaline Hypobromite Solutions.” JOURNAL OF THE ELECTROCHEMICAL SOCIETY 146 (5): 1903–9.
Chicago author-date (all authors)
Theuwis, Antoon, and Walter Gomes. 1999. “Electrochemical and Etching Behavior of InP and In0.53Ga0.47As in Alkaline Hypobromite Solutions.” JOURNAL OF THE ELECTROCHEMICAL SOCIETY 146 (5): 1903–1909.
Vancouver
1.
Theuwis A, Gomes W. Electrochemical and etching behavior of InP and In0.53Ga0.47As in alkaline hypobromite solutions. JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 1999;146(5):1903–9.
IEEE
[1]
A. Theuwis and W. Gomes, “Electrochemical and etching behavior of InP and In0.53Ga0.47As in alkaline hypobromite solutions,” JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 146, no. 5, pp. 1903–1909, 1999.
@article{174464,
  author       = {{Theuwis, Antoon and Gomes, Walter}},
  issn         = {{0013-4651}},
  journal      = {{JOURNAL OF THE ELECTROCHEMICAL SOCIETY}},
  language     = {{eng}},
  number       = {{5}},
  pages        = {{1903--1909}},
  title        = {{Electrochemical and etching behavior of InP and In0.53Ga0.47As in alkaline hypobromite solutions}},
  volume       = {{146}},
  year         = {{1999}},
}

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