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Electrochemical and etching behavior of InP and In0.53Ga0.47As in alkaline hypobromite solutions.

Antoon Theuwis and Walter Gomes (1999) JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 146(5). p.1903-1909
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (original)
publication status
published
subject
journal title
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
J. Electrochem. Soc.
volume
146
issue
5
pages
1903-1909 pages
Web of Science type
Article
Web of Science id
000080343300049
ISSN
0013-4651
language
English
UGent publication?
yes
classification
A1
id
174464
handle
http://hdl.handle.net/1854/LU-174464
date created
2004-01-14 13:40:00
date last changed
2018-01-29 12:12:59
@article{174464,
  author       = {Theuwis, Antoon and Gomes, Walter},
  issn         = {0013-4651},
  journal      = {JOURNAL OF THE ELECTROCHEMICAL SOCIETY},
  language     = {eng},
  number       = {5},
  pages        = {1903--1909},
  title        = {Electrochemical and etching behavior of InP and In0.53Ga0.47As in alkaline hypobromite solutions.},
  volume       = {146},
  year         = {1999},
}

Chicago
Theuwis, Antoon, and Walter Gomes. 1999. “Electrochemical and Etching Behavior of InP and In0.53Ga0.47As in Alkaline Hypobromite Solutions.” Journal of the Electrochemical Society 146 (5): 1903–1909.
APA
Theuwis, A., & Gomes, W. (1999). Electrochemical and etching behavior of InP and In0.53Ga0.47As in alkaline hypobromite solutions. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(5), 1903–1909.
Vancouver
1.
Theuwis A, Gomes W. Electrochemical and etching behavior of InP and In0.53Ga0.47As in alkaline hypobromite solutions. JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 1999;146(5):1903–9.
MLA
Theuwis, Antoon, and Walter Gomes. “Electrochemical and Etching Behavior of InP and In0.53Ga0.47As in Alkaline Hypobromite Solutions.” JOURNAL OF THE ELECTROCHEMICAL SOCIETY 146.5 (1999): 1903–1909. Print.