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Electrochemical and etching behavior of InP and In0.53Ga0.47As in alkaline hypobromite solutions.

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Chicago
Theuwis, Antoon, and Walter Gomes. 1999. “Electrochemical and Etching Behavior of InP and In0.53Ga0.47As in Alkaline Hypobromite Solutions.” Journal of the Electrochemical Society 146 (5): 1903–1909.
APA
Theuwis, A., & Gomes, W. (1999). Electrochemical and etching behavior of InP and In0.53Ga0.47As in alkaline hypobromite solutions. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(5), 1903–1909.
Vancouver
1.
Theuwis A, Gomes W. Electrochemical and etching behavior of InP and In0.53Ga0.47As in alkaline hypobromite solutions. JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 1999;146(5):1903–9.
MLA
Theuwis, Antoon, and Walter Gomes. “Electrochemical and Etching Behavior of InP and In0.53Ga0.47As in Alkaline Hypobromite Solutions.” JOURNAL OF THE ELECTROCHEMICAL SOCIETY 146.5 (1999): 1903–1909. Print.
@article{174464,
  author       = {Theuwis, Antoon and Gomes, Walter},
  issn         = {0013-4651},
  journal      = {JOURNAL OF THE ELECTROCHEMICAL SOCIETY},
  language     = {eng},
  number       = {5},
  pages        = {1903--1909},
  title        = {Electrochemical and etching behavior of InP and In0.53Ga0.47As in alkaline hypobromite solutions.},
  volume       = {146},
  year         = {1999},
}

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