The electrochemical impedance of one-equivalent electrode processes at dark semiconductor/redox electrodes involving charge transfer through surface states, 2 : the n-GaAs/Fe3+ system as an experimental example
- Author
- Zeger Hens (UGent) and Walter Gomes
- Organization
Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-174431
- MLA
- Hens, Zeger, and Walter Gomes. “The Electrochemical Impedance of One-Equivalent Electrode Processes at Dark Semiconductor/Redox Electrodes Involving Charge Transfer through Surface States, 2 : The n-GaAs/Fe3+ System as an Experimental Example.” JOURNAL OF PHYSICAL CHEMISTRY B, vol. 103, no. 1, 1999, pp. 130–38.
- APA
- Hens, Z., & Gomes, W. (1999). The electrochemical impedance of one-equivalent electrode processes at dark semiconductor/redox electrodes involving charge transfer through surface states, 2 : the n-GaAs/Fe3+ system as an experimental example. JOURNAL OF PHYSICAL CHEMISTRY B, 103(1), 130–138.
- Chicago author-date
- Hens, Zeger, and Walter Gomes. 1999. “The Electrochemical Impedance of One-Equivalent Electrode Processes at Dark Semiconductor/Redox Electrodes Involving Charge Transfer through Surface States, 2 : The n-GaAs/Fe3+ System as an Experimental Example.” JOURNAL OF PHYSICAL CHEMISTRY B 103 (1): 130–38.
- Chicago author-date (all authors)
- Hens, Zeger, and Walter Gomes. 1999. “The Electrochemical Impedance of One-Equivalent Electrode Processes at Dark Semiconductor/Redox Electrodes Involving Charge Transfer through Surface States, 2 : The n-GaAs/Fe3+ System as an Experimental Example.” JOURNAL OF PHYSICAL CHEMISTRY B 103 (1): 130–138.
- Vancouver
- 1.Hens Z, Gomes W. The electrochemical impedance of one-equivalent electrode processes at dark semiconductor/redox electrodes involving charge transfer through surface states, 2 : the n-GaAs/Fe3+ system as an experimental example. JOURNAL OF PHYSICAL CHEMISTRY B. 1999;103(1):130–8.
- IEEE
- [1]Z. Hens and W. Gomes, “The electrochemical impedance of one-equivalent electrode processes at dark semiconductor/redox electrodes involving charge transfer through surface states, 2 : the n-GaAs/Fe3+ system as an experimental example,” JOURNAL OF PHYSICAL CHEMISTRY B, vol. 103, no. 1, pp. 130–138, 1999.
@article{174431,
author = {{Hens, Zeger and Gomes, Walter}},
issn = {{1089-5647}},
journal = {{JOURNAL OF PHYSICAL CHEMISTRY B}},
language = {{eng}},
number = {{1}},
pages = {{130--138}},
title = {{The electrochemical impedance of one-equivalent electrode processes at dark semiconductor/redox electrodes involving charge transfer through surface states, 2 : the n-GaAs/Fe3+ system as an experimental example}},
volume = {{103}},
year = {{1999}},
}