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Elastic strain in In0.18Ga0.82N layer: A combined x-ray diffraction and Rutherford backscattering/channeling study.

(1999) APPLIED PHYSICS LETTERS. 74(3). p.365-367
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Chicago
WU, MF, A VANTOMME, SM HOGG, G LANGOUCHE, Wim Van Der Stricht, Koen Jacobs, and Ingrid Moerman. 1999. “Elastic Strain in In0.18Ga0.82N Layer: A Combined X-ray Diffraction and Rutherford Backscattering/channeling Study.” Applied Physics Letters 74 (3): 365–367.
APA
WU, M., VANTOMME, A., HOGG, S., LANGOUCHE, G., Van Der Stricht, W., Jacobs, K., & Moerman, I. (1999). Elastic strain in In0.18Ga0.82N layer: A combined x-ray diffraction and Rutherford backscattering/channeling study. APPLIED PHYSICS LETTERS, 74(3), 365–367.
Vancouver
1.
WU M, VANTOMME A, HOGG S, LANGOUCHE G, Van Der Stricht W, Jacobs K, et al. Elastic strain in In0.18Ga0.82N layer: A combined x-ray diffraction and Rutherford backscattering/channeling study. APPLIED PHYSICS LETTERS. 1999;74(3):365–7.
MLA
WU, MF, A VANTOMME, SM HOGG, et al. “Elastic Strain in In0.18Ga0.82N Layer: A Combined X-ray Diffraction and Rutherford Backscattering/channeling Study.” APPLIED PHYSICS LETTERS 74.3 (1999): 365–367. Print.
@article{173660,
  author       = {WU, MF and VANTOMME, A and HOGG, SM and LANGOUCHE, G and Van Der Stricht, Wim and Jacobs, Koen and Moerman, Ingrid},
  issn         = {0003-6951},
  journal      = {APPLIED PHYSICS LETTERS},
  language     = {eng},
  number       = {3},
  pages        = {365--367},
  title        = {Elastic strain in In0.18Ga0.82N layer: A combined x-ray diffraction and Rutherford backscattering/channeling study.},
  volume       = {74},
  year         = {1999},
}

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