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Enhanced sensitivity of silicon-on-insulator surface plasmon interferometer with additional silicon layer

Khai Le Quang UGent and Peter Bienstman UGent (2011) IEEE PHOTONICS JOURNAL. 3(3). p.538-545
abstract
t is theoretically found that by adding a thin dielectric layer (35 nm) on top of our previously proposed surface plasmon interference (SPI) biosensor in silicon-on-insulator (SOI) a sensitivity enhancement is obtained of up to 2500 nm/RIU (refractive index unit) for short sensors. At the same time, the corresponding figure of merit (FOM) is as high as 237 (RIU-1). This improvement is caused by the reduction in group index difference between the two interfering modes.
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (original)
publication status
published
subject
keyword
Surface plasmon interferometer, silicon-on-insulator, sensitivity enhancement
journal title
IEEE PHOTONICS JOURNAL
IEEE Photonics J.
volume
3
issue
3
pages
538 - 545
Web of Science type
Article
Web of Science id
000291658300001
JCR category
ENGINEERING, ELECTRICAL & ELECTRONIC
JCR impact factor
2.32 (2011)
JCR rank
33/244 (2011)
JCR quartile
1 (2011)
ISSN
1943-0655
DOI
10.1109/JPHOT.2011.2156778
project
Center for nano- and biophotonics (NB-Photonics)
language
English
UGent publication?
yes
classification
A1
copyright statement
I have transferred the copyright for this publication to the publisher
id
1735245
handle
http://hdl.handle.net/1854/LU-1735245
date created
2011-06-27 16:07:07
date last changed
2016-12-19 15:44:35
@article{1735245,
  abstract     = {t is theoretically found that by adding a thin dielectric layer (35 nm) on top of our previously proposed surface plasmon interference (SPI) biosensor in silicon-on-insulator (SOI) a sensitivity enhancement is obtained of up to 2500 nm/RIU (refractive index unit) for short sensors. At the same time, the corresponding figure of merit (FOM) is as high as 237 (RIU-1). This improvement is caused by the reduction in group index difference between the two interfering modes.},
  author       = {Le Quang, Khai and Bienstman, Peter},
  issn         = {1943-0655},
  journal      = {IEEE PHOTONICS JOURNAL},
  keyword      = {Surface plasmon interferometer,silicon-on-insulator,sensitivity enhancement},
  language     = {eng},
  number       = {3},
  pages        = {538--545},
  title        = {Enhanced sensitivity of silicon-on-insulator surface plasmon interferometer with additional silicon layer},
  url          = {http://dx.doi.org/10.1109/JPHOT.2011.2156778},
  volume       = {3},
  year         = {2011},
}

Chicago
Le Quang, Khai, and Peter Bienstman. 2011. “Enhanced Sensitivity of Silicon-on-insulator Surface Plasmon Interferometer with Additional Silicon Layer.” Ieee Photonics Journal 3 (3): 538–545.
APA
Le Quang, K., & Bienstman, P. (2011). Enhanced sensitivity of silicon-on-insulator surface plasmon interferometer with additional silicon layer. IEEE PHOTONICS JOURNAL, 3(3), 538–545.
Vancouver
1.
Le Quang K, Bienstman P. Enhanced sensitivity of silicon-on-insulator surface plasmon interferometer with additional silicon layer. IEEE PHOTONICS JOURNAL. 2011;3(3):538–45.
MLA
Le Quang, Khai, and Peter Bienstman. “Enhanced Sensitivity of Silicon-on-insulator Surface Plasmon Interferometer with Additional Silicon Layer.” IEEE PHOTONICS JOURNAL 3.3 (2011): 538–545. Print.