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Enhanced sensitivity of silicon-on-insulator surface plasmon interferometer with additional silicon layer

Khai Le Quang (UGent) and Peter Bienstman (UGent)
(2011) IEEE PHOTONICS JOURNAL. 3(3). p.538-545
Author
Organization
Project
Center for nano- and biophotonics (NB-Photonics)
Abstract
t is theoretically found that by adding a thin dielectric layer (35 nm) on top of our previously proposed surface plasmon interference (SPI) biosensor in silicon-on-insulator (SOI) a sensitivity enhancement is obtained of up to 2500 nm/RIU (refractive index unit) for short sensors. At the same time, the corresponding figure of merit (FOM) is as high as 237 (RIU-1). This improvement is caused by the reduction in group index difference between the two interfering modes.
Keywords
Surface plasmon interferometer, silicon-on-insulator, sensitivity enhancement

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Citation

Please use this url to cite or link to this publication:

Chicago
Le Quang, Khai, and Peter Bienstman. 2011. “Enhanced Sensitivity of Silicon-on-insulator Surface Plasmon Interferometer with Additional Silicon Layer.” Ieee Photonics Journal 3 (3): 538–545.
APA
Le Quang, K., & Bienstman, P. (2011). Enhanced sensitivity of silicon-on-insulator surface plasmon interferometer with additional silicon layer. IEEE PHOTONICS JOURNAL, 3(3), 538–545.
Vancouver
1.
Le Quang K, Bienstman P. Enhanced sensitivity of silicon-on-insulator surface plasmon interferometer with additional silicon layer. IEEE PHOTONICS JOURNAL. 2011;3(3):538–45.
MLA
Le Quang, Khai, and Peter Bienstman. “Enhanced Sensitivity of Silicon-on-insulator Surface Plasmon Interferometer with Additional Silicon Layer.” IEEE PHOTONICS JOURNAL 3.3 (2011): 538–545. Print.
@article{1735245,
  abstract     = {t is theoretically found that by adding a thin dielectric layer (35 nm) on top of our previously proposed surface plasmon interference (SPI) biosensor in silicon-on-insulator (SOI) a sensitivity enhancement is obtained of up to 2500 nm/RIU (refractive index unit) for short sensors. At the same time, the corresponding figure of merit (FOM) is as high as 237 (RIU-1). This improvement is caused by the reduction in group index difference between the two interfering modes.},
  author       = {Le Quang, Khai and Bienstman, Peter},
  issn         = {1943-0655},
  journal      = {IEEE PHOTONICS JOURNAL},
  keyword      = {Surface plasmon interferometer,silicon-on-insulator,sensitivity enhancement},
  language     = {eng},
  number       = {3},
  pages        = {538--545},
  title        = {Enhanced sensitivity of silicon-on-insulator surface plasmon interferometer with additional silicon layer},
  url          = {http://dx.doi.org/10.1109/JPHOT.2011.2156778},
  volume       = {3},
  year         = {2011},
}

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