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High quality InGaAs/AlGaAs lasers grown on Ge substrates.

(1998) JOURNAL OF CRYSTAL GROWTH. 195(1-4). p.655-659
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Chicago
D’Hondt, Mark, Zong-Qiang Yu, Bart Depreter, Carl Sys, Ingrid Moerman, Piet Demeester, and P MIJLEMANS. 1998. “High Quality InGaAs/AlGaAs Lasers Grown on Ge Substrates.” Journal of Crystal Growth 195 (1-4): 655–659.
APA
D’Hondt, Mark, Yu, Z.-Q., Depreter, B., Sys, C., Moerman, I., Demeester, P., & MIJLEMANS, P. (1998). High quality InGaAs/AlGaAs lasers grown on Ge substrates. JOURNAL OF CRYSTAL GROWTH, 195(1-4), 655–659.
Vancouver
1.
D’Hondt M, Yu Z-Q, Depreter B, Sys C, Moerman I, Demeester P, et al. High quality InGaAs/AlGaAs lasers grown on Ge substrates. JOURNAL OF CRYSTAL GROWTH. 1998;195(1-4):655–9.
MLA
D’Hondt, Mark, Zong-Qiang Yu, Bart Depreter, et al. “High Quality InGaAs/AlGaAs Lasers Grown on Ge Substrates.” JOURNAL OF CRYSTAL GROWTH 195.1-4 (1998): 655–659. Print.
@article{173332,
  author       = {D'Hondt, Mark and Yu, Zong-Qiang and Depreter, Bart and Sys, Carl and Moerman, Ingrid and Demeester, Piet and MIJLEMANS, P},
  issn         = {0022-0248},
  journal      = {JOURNAL OF CRYSTAL GROWTH},
  language     = {eng},
  number       = {1-4},
  pages        = {655--659},
  title        = {High quality InGaAs/AlGaAs lasers grown on Ge substrates.},
  volume       = {195},
  year         = {1998},
}

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