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Highly uniform AlAs/GaAs, InGa(Al)P/GaAs and InGaAs(P)/InP structures grown in a three 2" wafer close-spaced vertical rotating disk reactor.

(1998) JOURNAL OF CRYSTAL GROWTH. 195(1-4). p.644-647
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Chicago
Vanhollebeke, Koen, L CONSIDINE, Ingrid Moerman, Piet Demeester, EJ THRUSH, and JA CRAWLEY. 1998. “Highly Uniform AlAs/GaAs, InGa(Al)P/GaAs and InGaAs(P)/InP Structures Grown in a Three 2" Wafer Close-spaced Vertical Rotating Disk Reactor.” Journal of Crystal Growth 195 (1-4): 644–647.
APA
Vanhollebeke, K., CONSIDINE, L., Moerman, I., Demeester, P., THRUSH, E., & CRAWLEY, J. (1998). Highly uniform AlAs/GaAs, InGa(Al)P/GaAs and InGaAs(P)/InP structures grown in a three 2" wafer close-spaced vertical rotating disk reactor. JOURNAL OF CRYSTAL GROWTH, 195(1-4), 644–647.
Vancouver
1.
Vanhollebeke K, CONSIDINE L, Moerman I, Demeester P, THRUSH E, CRAWLEY J. Highly uniform AlAs/GaAs, InGa(Al)P/GaAs and InGaAs(P)/InP structures grown in a three 2" wafer close-spaced vertical rotating disk reactor. JOURNAL OF CRYSTAL GROWTH. 1998;195(1-4):644–7.
MLA
Vanhollebeke, Koen, L CONSIDINE, Ingrid Moerman, et al. “Highly Uniform AlAs/GaAs, InGa(Al)P/GaAs and InGaAs(P)/InP Structures Grown in a Three 2" Wafer Close-spaced Vertical Rotating Disk Reactor.” JOURNAL OF CRYSTAL GROWTH 195.1-4 (1998): 644–647. Print.
@article{173327,
  author       = {Vanhollebeke, Koen and CONSIDINE, L and Moerman, Ingrid and Demeester, Piet and THRUSH, EJ and CRAWLEY, JA},
  issn         = {0022-0248},
  journal      = {JOURNAL OF CRYSTAL GROWTH},
  language     = {eng},
  number       = {1-4},
  pages        = {644--647},
  title        = {Highly uniform AlAs/GaAs, InGa(Al)P/GaAs and InGaAs(P)/InP structures grown in a three 2{\textacutedbl} wafer close-spaced vertical rotating disk reactor.},
  volume       = {195},
  year         = {1998},
}

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