Highly uniform AlAs/GaAs, InGa(Al)P/GaAs and InGaAs(P)/InP structures grown in a three 2" wafer close-spaced vertical rotating disk reactor.
- Author
- Koen Vanhollebeke, L CONSIDINE, Ingrid Moerman (UGent) , Piet Demeester (UGent) , EJ THRUSH and JA CRAWLEY
- Organization
Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-173327
- Chicago
- Vanhollebeke, Koen, L CONSIDINE, Ingrid Moerman, Piet Demeester, EJ THRUSH, and JA CRAWLEY. 1998. “Highly Uniform AlAs/GaAs, InGa(Al)P/GaAs and InGaAs(P)/InP Structures Grown in a Three 2" Wafer Close-spaced Vertical Rotating Disk Reactor.” Journal of Crystal Growth 195 (1-4): 644–647.
- APA
- Vanhollebeke, K., CONSIDINE, L., Moerman, I., Demeester, P., THRUSH, E., & CRAWLEY, J. (1998). Highly uniform AlAs/GaAs, InGa(Al)P/GaAs and InGaAs(P)/InP structures grown in a three 2" wafer close-spaced vertical rotating disk reactor. JOURNAL OF CRYSTAL GROWTH, 195(1-4), 644–647.
- Vancouver
- 1.Vanhollebeke K, CONSIDINE L, Moerman I, Demeester P, THRUSH E, CRAWLEY J. Highly uniform AlAs/GaAs, InGa(Al)P/GaAs and InGaAs(P)/InP structures grown in a three 2" wafer close-spaced vertical rotating disk reactor. JOURNAL OF CRYSTAL GROWTH. 1998;195(1-4):644–7.
- MLA
- Vanhollebeke, Koen, L CONSIDINE, Ingrid Moerman, et al. “Highly Uniform AlAs/GaAs, InGa(Al)P/GaAs and InGaAs(P)/InP Structures Grown in a Three 2" Wafer Close-spaced Vertical Rotating Disk Reactor.” JOURNAL OF CRYSTAL GROWTH 195.1-4 (1998): 644–647. Print.
@article{173327,
author = {Vanhollebeke, Koen and CONSIDINE, L and Moerman, Ingrid and Demeester, Piet and THRUSH, EJ and CRAWLEY, JA},
issn = {0022-0248},
journal = {JOURNAL OF CRYSTAL GROWTH},
language = {eng},
number = {1-4},
pages = {644--647},
title = {Highly uniform AlAs/GaAs, InGa(Al)P/GaAs and InGaAs(P)/InP structures grown in a three 2{\textacutedbl} wafer close-spaced vertical rotating disk reactor.},
volume = {195},
year = {1998},
}