Growth and in situ monitoring of GaN using IR interference effects.
- Author
- L CONSIDINE, EJ THRUSH, JA CRAWLEY, K JACOBS, W VAN DER STRICHT, Ingrid Moerman (UGent) , Piet Demeester (UGent) , GH PARK, SJ HWANG and JJ SONG
- Organization
Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-173318
- MLA
- CONSIDINE, L, EJ THRUSH, JA CRAWLEY, et al. “Growth and in Situ Monitoring of GaN Using IR Interference Effects.” JOURNAL OF CRYSTAL GROWTH 195.1-4 (1998): 192–198. Print.
- APA
- CONSIDINE, L., THRUSH, E., CRAWLEY, J., JACOBS, K., VAN DER STRICHT, W., Moerman, I., Demeester, P., et al. (1998). Growth and in situ monitoring of GaN using IR interference effects. JOURNAL OF CRYSTAL GROWTH, 195(1-4), 192–198.
- Chicago author-date
- CONSIDINE, L, EJ THRUSH, JA CRAWLEY, K JACOBS, W VAN DER STRICHT, Ingrid Moerman, Piet Demeester, GH PARK, SJ HWANG, and JJ SONG. 1998. “Growth and in Situ Monitoring of GaN Using IR Interference Effects.” Journal of Crystal Growth 195 (1-4): 192–198.
- Chicago author-date (all authors)
- CONSIDINE, L, EJ THRUSH, JA CRAWLEY, K JACOBS, W VAN DER STRICHT, Ingrid Moerman, Piet Demeester, GH PARK, SJ HWANG, and JJ SONG. 1998. “Growth and in Situ Monitoring of GaN Using IR Interference Effects.” Journal of Crystal Growth 195 (1-4): 192–198.
- Vancouver
- 1.CONSIDINE L, THRUSH E, CRAWLEY J, JACOBS K, VAN DER STRICHT W, Moerman I, et al. Growth and in situ monitoring of GaN using IR interference effects. JOURNAL OF CRYSTAL GROWTH. 1998;195(1-4):192–8.
- IEEE
- [1]L. CONSIDINE et al., “Growth and in situ monitoring of GaN using IR interference effects.,” JOURNAL OF CRYSTAL GROWTH, vol. 195, no. 1–4, pp. 192–198, 1998.
@article{173318,
author = {CONSIDINE, L and THRUSH, EJ and CRAWLEY, JA and JACOBS, K and VAN DER STRICHT, W and Moerman, Ingrid and Demeester, Piet and PARK, GH and HWANG, SJ and SONG, JJ},
issn = {0022-0248},
journal = {JOURNAL OF CRYSTAL GROWTH},
language = {eng},
number = {1-4},
pages = {192--198},
title = {Growth and in situ monitoring of GaN using IR interference effects.},
volume = {195},
year = {1998},
}