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Low temperature anneal of electron irradiation induced defects in p type silicon.

(1998) MATERIALS SCIENCE AND TECHNOLOGY. 14(12). p.1295-1298
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MLA
TRAUWAERT, MA, J VANHELLEMONT, HE MAES, et al. “Low Temperature Anneal of Electron Irradiation Induced Defects in p Type Silicon.” MATERIALS SCIENCE AND TECHNOLOGY 14.12 (1998): 1295–1298. Print.
APA
TRAUWAERT, M., VANHELLEMONT, J., MAES, H., VAN BAVEL, A., LANGOUCHE, G., & Clauws, P. (1998). Low temperature anneal of electron irradiation induced defects in p type silicon. MATERIALS SCIENCE AND TECHNOLOGY, 14(12), 1295–1298.
Chicago author-date
TRAUWAERT, MA, J VANHELLEMONT, HE MAES, AM VAN BAVEL, G LANGOUCHE, and Paul Clauws. 1998. “Low Temperature Anneal of Electron Irradiation Induced Defects in p Type Silicon.” Materials Science and Technology 14 (12): 1295–1298.
Chicago author-date (all authors)
TRAUWAERT, MA, J VANHELLEMONT, HE MAES, AM VAN BAVEL, G LANGOUCHE, and Paul Clauws. 1998. “Low Temperature Anneal of Electron Irradiation Induced Defects in p Type Silicon.” Materials Science and Technology 14 (12): 1295–1298.
Vancouver
1.
TRAUWAERT M, VANHELLEMONT J, MAES H, VAN BAVEL A, LANGOUCHE G, Clauws P. Low temperature anneal of electron irradiation induced defects in p type silicon. MATERIALS SCIENCE AND TECHNOLOGY. 1998;14(12):1295–8.
IEEE
[1]
M. TRAUWAERT, J. VANHELLEMONT, H. MAES, A. VAN BAVEL, G. LANGOUCHE, and P. Clauws, “Low temperature anneal of electron irradiation induced defects in p type silicon.,” MATERIALS SCIENCE AND TECHNOLOGY, vol. 14, no. 12, pp. 1295–1298, 1998.
@article{173192,
  author       = {TRAUWAERT, MA and VANHELLEMONT, J and MAES, HE and VAN BAVEL, AM and LANGOUCHE, G and Clauws, Paul},
  issn         = {0267-0836},
  journal      = {MATERIALS SCIENCE AND TECHNOLOGY},
  language     = {eng},
  number       = {12},
  pages        = {1295--1298},
  title        = {Low temperature anneal of electron irradiation induced defects in p type silicon.},
  volume       = {14},
  year         = {1998},
}

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