Highly chemical reactive ion etching of gallium nitride
- Author
- F Karouta, B Jacobs, Ingrid Moerman (UGent) , K Jacobs, JL Weyher, S Porowksi, R Crane and PR Hageman
- Organization
- Abstract
- A highly chemical reactive ion etching process has been developed for MOVPE-grown GaN on sapphire. The key element for the enhancement of the chemical property during etching is the use of a fluorine containing gas in a chlorine based chemistry. In the perspective of using GaN substrates for homo-epitaxy of high quality GaN/AlGaN structures we have used the above described RIE process to smoothen Ga-polar GaN substrates. The RMS value, measured by AFM, went from 20 Angstrom (after mechanical polishing) down to 4 Angstrom after 6 minutes of RIE. Etching N-polar GaN resulted in a higher etch rate than Ga-polar materials (165 vs. 110 nm/min) but the resulting surface was quite rough and suffers from instability problems. Heat treatment and HCl dip showed a partial recovery of Schottky characteristics after RIE.
- Keywords
- GAN, PLASMAS
Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-172941
- MLA
- Karouta, F., et al. “Highly Chemical Reactive Ion Etching of Gallium Nitride.” MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, vol. 5, no. suppl. 1, 2000, pp. U768–73.
- APA
- Karouta, F., Jacobs, B., Moerman, I., Jacobs, K., Weyher, J., Porowksi, S., … Hageman, P. (2000). Highly chemical reactive ion etching of gallium nitride. MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 5(suppl. 1), U768–U773.
- Chicago author-date
- Karouta, F, B Jacobs, Ingrid Moerman, K Jacobs, JL Weyher, S Porowksi, R Crane, and PR Hageman. 2000. “Highly Chemical Reactive Ion Etching of Gallium Nitride.” MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH 5 (suppl. 1): U768–73.
- Chicago author-date (all authors)
- Karouta, F, B Jacobs, Ingrid Moerman, K Jacobs, JL Weyher, S Porowksi, R Crane, and PR Hageman. 2000. “Highly Chemical Reactive Ion Etching of Gallium Nitride.” MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH 5 (suppl. 1): U768–U773.
- Vancouver
- 1.Karouta F, Jacobs B, Moerman I, Jacobs K, Weyher J, Porowksi S, et al. Highly chemical reactive ion etching of gallium nitride. MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH. 2000;5(suppl. 1):U768–73.
- IEEE
- [1]F. Karouta et al., “Highly chemical reactive ion etching of gallium nitride,” MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, vol. 5, no. suppl. 1, pp. U768–U773, 2000.
@article{172941,
abstract = {{A highly chemical reactive ion etching process has been developed for MOVPE-grown GaN on sapphire. The key element for the enhancement of the chemical property during etching is the use of a fluorine containing gas in a chlorine based chemistry. In the perspective of using GaN substrates for homo-epitaxy of high quality GaN/AlGaN structures we have used the above described RIE process to smoothen Ga-polar GaN substrates. The RMS value, measured by AFM, went from 20 Angstrom (after mechanical polishing) down to 4 Angstrom after 6 minutes of RIE. Etching N-polar GaN resulted in a higher etch rate than Ga-polar materials (165 vs. 110 nm/min) but the resulting surface was quite rough and suffers from instability problems. Heat treatment and HCl dip showed a partial recovery of Schottky characteristics after RIE.}},
articleno = {{W11.76}},
author = {{Karouta, F and Jacobs, B and Moerman, Ingrid and Jacobs, K and Weyher, JL and Porowksi, S and Crane, R and Hageman, PR}},
issn = {{1092-5783}},
journal = {{MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH}},
keywords = {{GAN,PLASMAS}},
language = {{eng}},
location = {{Boston, MA, USA}},
number = {{suppl. 1}},
pages = {{W11.76:U768--W11.76:U773}},
title = {{Highly chemical reactive ion etching of gallium nitride}},
volume = {{5}},
year = {{2000}},
}