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Highly chemical reactive ion etching of gallium nitride

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Abstract
A highly chemical reactive ion etching process has been developed for MOVPE-grown GaN on sapphire. The key element for the enhancement of the chemical property during etching is the use of a fluorine containing gas in a chlorine based chemistry. In the perspective of using GaN substrates for homo-epitaxy of high quality GaN/AlGaN structures we have used the above described RIE process to smoothen Ga-polar GaN substrates. The RMS value, measured by AFM, went from 20 Angstrom (after mechanical polishing) down to 4 Angstrom after 6 minutes of RIE. Etching N-polar GaN resulted in a higher etch rate than Ga-polar materials (165 vs. 110 nm/min) but the resulting surface was quite rough and suffers from instability problems. Heat treatment and HCl dip showed a partial recovery of Schottky characteristics after RIE.
Keywords
GAN, PLASMAS

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Chicago
Karouta, F, B Jacobs, Ingrid Moerman, K Jacobs, JL Weyher, S Porowksi, R Crane, and PR Hageman. 2000. “Highly Chemical Reactive Ion Etching of Gallium Nitride.” Mrs Internet Journal of Nitride Semiconductor Research 5 (suppl. 1): U768–U773.
APA
Karouta, F., Jacobs, B., Moerman, I., Jacobs, K., Weyher, J., Porowksi, S., Crane, R., et al. (2000). Highly chemical reactive ion etching of gallium nitride. MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 5(suppl. 1), U768–U773. Presented at the Symposium on GaN and Related Alloys; held at the MRS Fall Meeting.
Vancouver
1.
Karouta F, Jacobs B, Moerman I, Jacobs K, Weyher J, Porowksi S, et al. Highly chemical reactive ion etching of gallium nitride. MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH. 2000;5(suppl. 1):U768–U773.
MLA
Karouta, F, B Jacobs, Ingrid Moerman, et al. “Highly Chemical Reactive Ion Etching of Gallium Nitride.” MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH 5.suppl. 1 (2000): U768–U773. Print.
@article{172941,
  abstract     = {A highly chemical reactive ion etching process has been developed for MOVPE-grown GaN on sapphire. The key element for the enhancement of the chemical property during etching is the use of a fluorine containing gas in a chlorine based chemistry. In the perspective of using GaN substrates for homo-epitaxy of high quality GaN/AlGaN structures we have used the above described RIE process to smoothen Ga-polar GaN substrates. The RMS value, measured by AFM, went from 20 Angstrom (after mechanical polishing) down to 4 Angstrom after 6 minutes of RIE. Etching N-polar GaN resulted in a higher etch rate than Ga-polar materials (165 vs. 110 nm/min) but the resulting surface was quite rough and suffers from instability problems. Heat treatment and HCl dip showed a partial recovery of Schottky characteristics after RIE.},
  articleno    = {W11.76},
  author       = {Karouta, F and Jacobs, B and Moerman, Ingrid and Jacobs, K and Weyher, JL and Porowksi, S and Crane, R and Hageman, PR},
  issn         = {1092-5783},
  journal      = {MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH},
  keywords     = {GAN,PLASMAS},
  language     = {eng},
  location     = {Boston, MA, USA},
  number       = {suppl. 1},
  pages        = {W11.76:U768--W11.76:U773},
  title        = {Highly chemical reactive ion etching of gallium nitride},
  volume       = {5},
  year         = {2000},
}

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