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Comparative study of structural properties and photoluminescence in InGaN layers with a high In content

Author
Organization
Abstract
Rutherford backscattering and channeling spectrometry (RBS), photoluminescence (PL) spectroscopy and transmission electron microscopy (TEM) have been used to investigate macroscopic and microscopic segregation in MOCVD grown InGaN layers. The PL peak energy and In content (measured by RES) were mapped at a large number of distinct points on the samples. An indium concentration of 40%, the highest measured in this work, corresponds to a PL peak of 710 nn strongly suggesting that the light-emitting regions of the sample me very indium-rich compared to the average measured by RES. Cross-sectional TEM observations show distinctive layering of the InGaN films. The TEM study further reveals that these layers consist of amorphous pyramidal contrast features with sizes of order 10 nm The composition of these specific contrast features is shown to be In-rich compared to the nitride matrix.
Keywords
EPILAYERS, DIODES, PHASE-SEPARATION

Citation

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MLA
Vantomme, A, MF Wu, S Hogg, et al. “Comparative Study of Structural Properties and Photoluminescence in InGaN Layers with a High In Content.” MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH 5.suppl. 1 (2000): U604–U609. Print.
APA
Vantomme, A., Wu, M., Hogg, S., Langouche, G., Jacobs, K., Moerman, I., White, M., et al. (2000). Comparative study of structural properties and photoluminescence in InGaN layers with a high In content. MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 5(suppl. 1), U604–U609. Presented at the Symposium on GaN and Related Alloys; held at the MRS Fall Meeting.
Chicago author-date
Vantomme, A, MF Wu, S Hogg, G Langouche, K Jacobs, Ingrid Moerman, ME White, et al. 2000. “Comparative Study of Structural Properties and Photoluminescence in InGaN Layers with a High In Content.” Mrs Internet Journal of Nitride Semiconductor Research 5 (suppl. 1): U604–U609.
Chicago author-date (all authors)
Vantomme, A, MF Wu, S Hogg, G Langouche, K Jacobs, Ingrid Moerman, ME White, KP O’Donnell, L Nistor, J Van Landuyt, and H Bender. 2000. “Comparative Study of Structural Properties and Photoluminescence in InGaN Layers with a High In Content.” Mrs Internet Journal of Nitride Semiconductor Research 5 (suppl. 1): U604–U609.
Vancouver
1.
Vantomme A, Wu M, Hogg S, Langouche G, Jacobs K, Moerman I, et al. Comparative study of structural properties and photoluminescence in InGaN layers with a high In content. MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH. 2000;5(suppl. 1):U604–U609.
IEEE
[1]
A. Vantomme et al., “Comparative study of structural properties and photoluminescence in InGaN layers with a high In content,” MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, vol. 5, no. suppl. 1, pp. U604–U609, 2000.
@article{172930,
  abstract     = {Rutherford backscattering and channeling spectrometry (RBS), photoluminescence (PL) spectroscopy and transmission electron microscopy (TEM) have been used to investigate macroscopic and microscopic segregation in MOCVD grown InGaN layers. The PL peak energy and In content (measured by RES) were mapped at a large number of distinct points on the samples. An indium concentration of 40%, the highest measured in this work, corresponds to a PL peak of 710 nn strongly suggesting that the light-emitting regions of the sample me very indium-rich compared to the average measured by RES. Cross-sectional TEM observations show distinctive layering of the InGaN films. The TEM study further reveals that these layers consist of amorphous pyramidal contrast features with sizes of order 10 nm The composition of these specific contrast features is shown to be In-rich compared to the nitride matrix.},
  articleno    = {W11.38},
  author       = {Vantomme, A and Wu, MF and Hogg, S and Langouche, G and Jacobs, K and Moerman, Ingrid and White, ME and O'Donnell, KP and Nistor, L and Van Landuyt, J and Bender, H},
  issn         = {1092-5783},
  journal      = {MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH},
  keywords     = {EPILAYERS,DIODES,PHASE-SEPARATION},
  language     = {eng},
  location     = {Boston, MA, USA},
  number       = {suppl. 1},
  pages        = {W11.38:U604--W11.38:U609},
  title        = {Comparative study of structural properties and photoluminescence in InGaN layers with a high In content},
  volume       = {5},
  year         = {2000},
}

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