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Probing nitride thin films in 3-dimensions using a variable energy electron beam

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Abstract
In this paper we illustrate the application of electron beam techniques to the measurement of strain, defect and alloy concentrations in nitride thin films. We present brief comparative studies of CL spectra of AlGaN and InGaN epilayers and EBSD patterns obtained from two silicon-doped 3 mum thick GaN epilayers grown on an on-axis (0001) sapphire substrate and a sapphire substrate misoriented by 10 degrees toward the m-plane (10 (1) over bar0).
Keywords
DIFFRACTION

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Chicago
Trager-Cowan, C, D McColl, F Sweeney, STF Grimson, JF Treguer, A Mohammed, PG Middleton, et al. 2000. “Probing Nitride Thin Films in 3-dimensions Using a Variable Energy Electron Beam.” Mrs Internet Journal of Nitride Semiconductor Research 5 (suppl. 1): U347–U352.
APA
Trager-Cowan, C., McColl, D., Sweeney, F., Grimson, S., Treguer, J., Mohammed, A., Middleton, P., et al. (2000). Probing nitride thin films in 3-dimensions using a variable energy electron beam. MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 5(suppl. 1), U347–U352. Presented at the Symposium on GaN and Related Alloys; held at the MRS Fall Meeting.
Vancouver
1.
Trager-Cowan C, McColl D, Sweeney F, Grimson S, Treguer J, Mohammed A, et al. Probing nitride thin films in 3-dimensions using a variable energy electron beam. MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH. 2000;5(suppl. 1):U347–U352.
MLA
Trager-Cowan, C, D McColl, F Sweeney, et al. “Probing Nitride Thin Films in 3-dimensions Using a Variable Energy Electron Beam.” MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH 5.suppl. 1 (2000): U347–U352. Print.
@article{172915,
  abstract     = {In this paper we illustrate the application of electron beam techniques to the measurement of strain, defect and alloy concentrations in nitride thin films. We present brief comparative studies of CL spectra of AlGaN and InGaN epilayers and EBSD patterns obtained from two silicon-doped 3 mum thick GaN epilayers grown on an on-axis (0001) sapphire substrate and a sapphire substrate misoriented by 10 degrees toward the m-plane (10 (1) over bar0).},
  articleno    = {W5.10},
  author       = {Trager-Cowan, C and McColl, D and Sweeney, F and Grimson, STF and Treguer, JF and Mohammed, A and Middleton, PG and Manson-Smith, SK and O'Donnell, KP and Van der Stricht, Wim and Moerman, Ingrid and Demeester, Piet and Wu, MF and Vantomme, A and Zubia, D and Hersee, SD},
  issn         = {1092-5783},
  journal      = {MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH},
  keywords     = {DIFFRACTION},
  language     = {eng},
  location     = {Boston, MA, USA},
  number       = {suppl. 1},
  pages        = {W5.10:U347--W5.10:U352},
  title        = {Probing nitride thin films in 3-dimensions using a variable energy electron beam},
  volume       = {5},
  year         = {2000},
}

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