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Electron energy loss studies at dislocations in GaN.

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Chicago
SHANG, P, U BANGERT, AJ HARVEY, N DUXBURY, and K JACOBS. 1999. “Electron Energy Loss Studies at Dislocations in GaN.” ELECTRON MICROSCOPY AND ANALYSIS 1999 161: 323–326.
APA
SHANG, P., BANGERT, U., HARVEY, A., DUXBURY, N., & JACOBS, K. (1999). Electron energy loss studies at dislocations in GaN. ELECTRON MICROSCOPY AND ANALYSIS 1999, 161, 323–326.
Vancouver
1.
SHANG P, BANGERT U, HARVEY A, DUXBURY N, JACOBS K. Electron energy loss studies at dislocations in GaN. ELECTRON MICROSCOPY AND ANALYSIS 1999. 1999;161:323–6.
MLA
SHANG, P, U BANGERT, AJ HARVEY, et al. “Electron Energy Loss Studies at Dislocations in GaN.” ELECTRON MICROSCOPY AND ANALYSIS 1999 161 (1999): 323–326. Print.
@article{172265,
  author       = {SHANG, P and BANGERT, U and HARVEY, AJ and DUXBURY, N and JACOBS, K},
  issn         = {0951-3248},
  journal      = {ELECTRON MICROSCOPY AND ANALYSIS 1999},
  language     = {eng},
  pages        = {323--326},
  title        = {Electron energy loss studies at dislocations in GaN.},
  volume       = {161},
  year         = {1999},
}

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