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Electron energy loss studies at dislocations in GaN.

P SHANG, U BANGERT, AJ HARVEY, N DUXBURY and K JACOBS (1999) ELECTRON MICROSCOPY AND ANALYSIS 1999. 161. p.323-326
Please use this url to cite or link to this publication:
author
year
type
journalArticle (original)
publication status
published
journal title
ELECTRON MICROSCOPY AND ANALYSIS 1999
volume
161
pages
323-326 pages
Web of Science type
Article
Web of Science id
000088782800076
ISSN
0951-3248
language
English
UGent publication?
yes
classification
A1
id
172265
handle
http://hdl.handle.net/1854/LU-172265
date created
2004-01-14 13:40:00
date last changed
2016-12-19 15:38:09
@article{172265,
  author       = {SHANG, P and BANGERT, U and HARVEY, AJ and DUXBURY, N and JACOBS, K},
  issn         = {0951-3248},
  journal      = {ELECTRON MICROSCOPY AND ANALYSIS 1999},
  language     = {eng},
  pages        = {323--326},
  title        = {Electron energy loss studies at dislocations in GaN.},
  volume       = {161},
  year         = {1999},
}

Chicago
SHANG, P, U BANGERT, AJ HARVEY, N DUXBURY, and K JACOBS. 1999. “Electron Energy Loss Studies at Dislocations in GaN.” ELECTRON MICROSCOPY AND ANALYSIS 1999 161: 323–326.
APA
SHANG, P., BANGERT, U., HARVEY, A., DUXBURY, N., & JACOBS, K. (1999). Electron energy loss studies at dislocations in GaN. ELECTRON MICROSCOPY AND ANALYSIS 1999, 161, 323–326.
Vancouver
1.
SHANG P, BANGERT U, HARVEY A, DUXBURY N, JACOBS K. Electron energy loss studies at dislocations in GaN. ELECTRON MICROSCOPY AND ANALYSIS 1999. 1999;161:323–6.
MLA
SHANG, P, U BANGERT, AJ HARVEY, et al. “Electron Energy Loss Studies at Dislocations in GaN.” ELECTRON MICROSCOPY AND ANALYSIS 1999 161 (1999): 323–326. Print.