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Microstructure and compositional behaviour of InGaN/GaN multiple quantum well structures.

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Chicago
DUXBURY, N, U BANGERT, P SHANG, EJ THRUSH, and K JACOBS. 1999. “Microstructure and Compositional Behaviour of InGaN/GaN Multiple Quantum Well Structures.” ELECTRON MICROSCOPY AND ANALYSIS 1999 161: 207–210.
APA
DUXBURY, N., BANGERT, U., SHANG, P., THRUSH, E., & JACOBS, K. (1999). Microstructure and compositional behaviour of InGaN/GaN multiple quantum well structures. ELECTRON MICROSCOPY AND ANALYSIS 1999, 161, 207–210.
Vancouver
1.
DUXBURY N, BANGERT U, SHANG P, THRUSH E, JACOBS K. Microstructure and compositional behaviour of InGaN/GaN multiple quantum well structures. ELECTRON MICROSCOPY AND ANALYSIS 1999. 1999;161:207–10.
MLA
DUXBURY, N, U BANGERT, P SHANG, et al. “Microstructure and Compositional Behaviour of InGaN/GaN Multiple Quantum Well Structures.” ELECTRON MICROSCOPY AND ANALYSIS 1999 161 (1999): 207–210. Print.
@article{172259,
  author       = {DUXBURY, N and BANGERT, U and SHANG, P and THRUSH, EJ and JACOBS, K},
  issn         = {0951-3248},
  journal      = {ELECTRON MICROSCOPY AND ANALYSIS 1999},
  language     = {eng},
  pages        = {207--210},
  title        = {Microstructure and compositional behaviour of InGaN/GaN multiple quantum well structures.},
  volume       = {161},
  year         = {1999},
}

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