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Microstructure and compositional behaviour of InGaN/GaN multiple quantum well structures.

N DUXBURY, U BANGERT, P SHANG, EJ THRUSH and K JACOBS (1999) ELECTRON MICROSCOPY AND ANALYSIS 1999. 161. p.207-210
Please use this url to cite or link to this publication:
author
year
type
journalArticle (original)
publication status
published
journal title
ELECTRON MICROSCOPY AND ANALYSIS 1999
volume
161
pages
207-210 pages
Web of Science type
Article
Web of Science id
000088782800048
ISSN
0951-3248
language
English
UGent publication?
yes
classification
A1
id
172259
handle
http://hdl.handle.net/1854/LU-172259
date created
2004-01-14 13:40:00
date last changed
2016-12-19 15:38:43
@article{172259,
  author       = {DUXBURY, N and BANGERT, U and SHANG, P and THRUSH, EJ and JACOBS, K},
  issn         = {0951-3248},
  journal      = {ELECTRON MICROSCOPY AND ANALYSIS 1999},
  language     = {eng},
  pages        = {207--210},
  title        = {Microstructure and compositional behaviour of InGaN/GaN multiple quantum well structures.},
  volume       = {161},
  year         = {1999},
}

Chicago
DUXBURY, N, U BANGERT, P SHANG, EJ THRUSH, and K JACOBS. 1999. “Microstructure and Compositional Behaviour of InGaN/GaN Multiple Quantum Well Structures.” ELECTRON MICROSCOPY AND ANALYSIS 1999 161: 207–210.
APA
DUXBURY, N., BANGERT, U., SHANG, P., THRUSH, E., & JACOBS, K. (1999). Microstructure and compositional behaviour of InGaN/GaN multiple quantum well structures. ELECTRON MICROSCOPY AND ANALYSIS 1999, 161, 207–210.
Vancouver
1.
DUXBURY N, BANGERT U, SHANG P, THRUSH E, JACOBS K. Microstructure and compositional behaviour of InGaN/GaN multiple quantum well structures. ELECTRON MICROSCOPY AND ANALYSIS 1999. 1999;161:207–10.
MLA
DUXBURY, N, U BANGERT, P SHANG, et al. “Microstructure and Compositional Behaviour of InGaN/GaN Multiple Quantum Well Structures.” ELECTRON MICROSCOPY AND ANALYSIS 1999 161 (1999): 207–210. Print.