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FILMS, GROWTH, EPITAXY, ERSI1.7 LAYERS, PHASE-SEPARATION, X-RAY-DIFFRACTION, Rutherford backscattering/channelling, X-ray diffraction, AlGaN, InGaN, elastic strain

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Citation

Please use this url to cite or link to this publication:

Chicago
Wu, MF, SD Yao, A Vantomme, S Hogg, G Langouche, Wim Van Der Stricht, Koen Jacobs, Ingrid Moerman, J Li, and GY Zhang. 2000. “Elastic Strain in InGaN and AlGaN Layers.” Materials Science and Engineering B-solid State Materials for Advanced Technology 75 (2-3): 232–235.
APA
Wu, MF, Yao, S., Vantomme, A., Hogg, S., Langouche, G., Van Der Stricht, W., Jacobs, K., et al. (2000). Elastic strain in InGaN and AlGaN layers. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 75(2-3), 232–235. Presented at the IUMRS International Conference of Advanced Materials.
Vancouver
1.
Wu M, Yao S, Vantomme A, Hogg S, Langouche G, Van Der Stricht W, et al. Elastic strain in InGaN and AlGaN layers. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 2000;75(2-3):232–5.
MLA
Wu, MF, SD Yao, A Vantomme, et al. “Elastic Strain in InGaN and AlGaN Layers.” MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 75.2-3 (2000): 232–235. Print.
@article{171479,
  author       = {Wu, MF and Yao, SD and Vantomme, A and Hogg, S and Langouche, G and Van Der Stricht, Wim and Jacobs, Koen and Moerman, Ingrid and Li, J and Zhang, GY},
  issn         = {0921-5107},
  journal      = {MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY},
  keywords     = {FILMS,GROWTH,EPITAXY,ERSI1.7 LAYERS,PHASE-SEPARATION,X-RAY-DIFFRACTION,Rutherford backscattering/channelling,X-ray diffraction,AlGaN,InGaN,elastic strain},
  language     = {eng},
  location     = {Beijing, PR China},
  number       = {2-3},
  pages        = {232--235},
  title        = {Elastic strain in InGaN and AlGaN layers},
  url          = {http://dx.doi.org/10.1016/S0921-5107(00)00371-8},
  volume       = {75},
  year         = {2000},
}

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