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Electrochemistry and photoetching of n-GaN.

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Chicago
Huygens, Inge, Katrien Strubbe, and Walter Gomes. 2000. “Electrochemistry and Photoetching of n-GaN.” Journal of the Electrochemical Society 147 (5): 1797–1802.
APA
Huygens, I., Strubbe, K., & Gomes, W. (2000). Electrochemistry and photoetching of n-GaN. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 147(5), 1797–1802.
Vancouver
1.
Huygens I, Strubbe K, Gomes W. Electrochemistry and photoetching of n-GaN. JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 2000;147(5):1797–802.
MLA
Huygens, Inge, Katrien Strubbe, and Walter Gomes. “Electrochemistry and Photoetching of n-GaN.” JOURNAL OF THE ELECTROCHEMICAL SOCIETY 147.5 (2000): 1797–1802. Print.
@article{171372,
  author       = {Huygens, Inge and Strubbe, Katrien and Gomes, Walter},
  issn         = {0013-4651},
  journal      = {JOURNAL OF THE ELECTROCHEMICAL SOCIETY},
  language     = {eng},
  number       = {5},
  pages        = {1797--1802},
  title        = {Electrochemistry and photoetching of n-GaN.},
  volume       = {147},
  year         = {2000},
}

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