Electrochemistry and photoetching of n-GaN
- Author
- Inge Huygens, Katrien Strubbe (UGent) and Walter Gomes
- Organization
Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-171372
- MLA
- Huygens, Inge, et al. “Electrochemistry and Photoetching of N-GaN.” JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 147, no. 5, 2000, pp. 1797–802.
- APA
- Huygens, I., Strubbe, K., & Gomes, W. (2000). Electrochemistry and photoetching of n-GaN. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 147(5), 1797–1802.
- Chicago author-date
- Huygens, Inge, Katrien Strubbe, and Walter Gomes. 2000. “Electrochemistry and Photoetching of N-GaN.” JOURNAL OF THE ELECTROCHEMICAL SOCIETY 147 (5): 1797–1802.
- Chicago author-date (all authors)
- Huygens, Inge, Katrien Strubbe, and Walter Gomes. 2000. “Electrochemistry and Photoetching of N-GaN.” JOURNAL OF THE ELECTROCHEMICAL SOCIETY 147 (5): 1797–1802.
- Vancouver
- 1.Huygens I, Strubbe K, Gomes W. Electrochemistry and photoetching of n-GaN. JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 2000;147(5):1797–802.
- IEEE
- [1]I. Huygens, K. Strubbe, and W. Gomes, “Electrochemistry and photoetching of n-GaN,” JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 147, no. 5, pp. 1797–1802, 2000.
@article{171372,
author = {{Huygens, Inge and Strubbe, Katrien and Gomes, Walter}},
issn = {{0013-4651}},
journal = {{JOURNAL OF THE ELECTROCHEMICAL SOCIETY}},
language = {{eng}},
number = {{5}},
pages = {{1797--1802}},
title = {{Electrochemistry and photoetching of n-GaN}},
volume = {{147}},
year = {{2000}},
}