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Indium segregation in InGaN quantum-well structures.

(2000) APPLIED PHYSICS LETTERS. 76(12). p.1600-1602
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Chicago
DUXBURY, N, U BANGERT, P DAWSON, EJ THRUSH, W VAN DER STRICHT, K JACOBS, and Ingrid Moerman. 2000. “Indium Segregation in InGaN Quantum-well Structures.” Applied Physics Letters 76 (12): 1600–1602.
APA
DUXBURY, N., BANGERT, U., DAWSON, P., THRUSH, E., VAN DER STRICHT, W., JACOBS, K., & Moerman, I. (2000). Indium segregation in InGaN quantum-well structures. APPLIED PHYSICS LETTERS, 76(12), 1600–1602.
Vancouver
1.
DUXBURY N, BANGERT U, DAWSON P, THRUSH E, VAN DER STRICHT W, JACOBS K, et al. Indium segregation in InGaN quantum-well structures. APPLIED PHYSICS LETTERS. 2000;76(12):1600–2.
MLA
DUXBURY, N, U BANGERT, P DAWSON, et al. “Indium Segregation in InGaN Quantum-well Structures.” APPLIED PHYSICS LETTERS 76.12 (2000): 1600–1602. Print.
@article{170810,
  author       = {DUXBURY, N and BANGERT, U and DAWSON, P and THRUSH, EJ and VAN DER STRICHT, W and JACOBS, K and Moerman, Ingrid},
  issn         = {0003-6951},
  journal      = {APPLIED PHYSICS LETTERS},
  language     = {eng},
  number       = {12},
  pages        = {1600--1602},
  title        = {Indium segregation in InGaN quantum-well structures.},
  volume       = {76},
  year         = {2000},
}

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