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Defect analysis of n-type silicon strained layers.

E SIMOEN, R LOO, P ROUSSEL, M CAYMAX, H BENDER, C CLAEYS, HJ HERZOG, Anja Blondeel and Paul Clauws (2001) MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 4(1-3). p.225-227
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (original)
publication status
published
subject
journal title
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Mater. Sci. Semicond. Process
volume
4
issue
1-3
pages
225-227 pages
Web of Science type
Article
Web of Science id
000167727200051
JCR category
ENGINEERING, ELECTRICAL & ELECTRONIC
JCR impact factor
0.419 (2001)
JCR rank
113/198 (2001)
JCR quartile
3 (2001)
ISSN
1369-8001
language
English
UGent publication?
yes
classification
A1
id
168330
handle
http://hdl.handle.net/1854/LU-168330
date created
2004-01-14 13:40:00
date last changed
2016-12-19 15:37:57
@article{168330,
  author       = {SIMOEN, E and LOO, R and ROUSSEL, P and CAYMAX, M and BENDER, H and CLAEYS, C and HERZOG, HJ and Blondeel, Anja and Clauws, Paul},
  issn         = {1369-8001},
  journal      = {MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING},
  language     = {eng},
  number       = {1-3},
  pages        = {225--227},
  title        = {Defect analysis of n-type silicon strained layers.},
  volume       = {4},
  year         = {2001},
}

Chicago
SIMOEN, E, R LOO, P ROUSSEL, M CAYMAX, H BENDER, C CLAEYS, HJ HERZOG, Anja Blondeel, and Paul Clauws. 2001. “Defect Analysis of N-type Silicon Strained Layers.” Materials Science in Semiconductor Processing 4 (1-3): 225–227.
APA
SIMOEN, E., LOO, R., ROUSSEL, P., CAYMAX, M., BENDER, H., CLAEYS, C., HERZOG, H., et al. (2001). Defect analysis of n-type silicon strained layers. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 4(1-3), 225–227.
Vancouver
1.
SIMOEN E, LOO R, ROUSSEL P, CAYMAX M, BENDER H, CLAEYS C, et al. Defect analysis of n-type silicon strained layers. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 2001;4(1-3):225–7.
MLA
SIMOEN, E, R LOO, P ROUSSEL, et al. “Defect Analysis of N-type Silicon Strained Layers.” MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 4.1-3 (2001): 225–227. Print.