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Ballistic electron emission microscopy studies of the temperature dependence of Schottky barrier height distribution in CoSi2/n-Si(100) diodes formed by solid phase reaction.

SY ZHU, XP QU, Roland Vanmeirhaeghe, C DETAVERNIER, GP RU, Felix Cardon and BZ LI (2000) SOLID-STATE ELECTRONICS. 44(12). p.2217-2223
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (original)
publication status
published
subject
journal title
SOLID-STATE ELECTRONICS
Solid-State Electron.
volume
44
issue
12
pages
2217-2223 pages
Web of Science type
Article
Web of Science id
000166666000019
ISSN
0038-1101
language
English
UGent publication?
yes
classification
A1
id
167829
handle
http://hdl.handle.net/1854/LU-167829
date created
2004-01-14 13:40:00
date last changed
2016-12-19 15:37:56
@article{167829,
  author       = {ZHU, SY and QU, XP and Vanmeirhaeghe, Roland and DETAVERNIER, C and RU, GP and Cardon, Felix and LI, BZ},
  issn         = {0038-1101},
  journal      = {SOLID-STATE ELECTRONICS},
  language     = {eng},
  number       = {12},
  pages        = {2217--2223},
  title        = {Ballistic electron emission microscopy studies of the temperature dependence of Schottky barrier height distribution in CoSi2/n-Si(100) diodes formed by solid phase reaction.},
  volume       = {44},
  year         = {2000},
}

Chicago
ZHU, SY, XP QU, Roland Vanmeirhaeghe, C DETAVERNIER, GP RU, Felix Cardon, and BZ LI. 2000. “Ballistic Electron Emission Microscopy Studies of the Temperature Dependence of Schottky Barrier Height Distribution in CoSi2/n-Si(100) Diodes Formed by Solid Phase Reaction.” Solid-state Electronics 44 (12): 2217–2223.
APA
ZHU, SY, QU, X., Vanmeirhaeghe, R., DETAVERNIER, C., RU, G., Cardon, F., & LI, B. (2000). Ballistic electron emission microscopy studies of the temperature dependence of Schottky barrier height distribution in CoSi2/n-Si(100) diodes formed by solid phase reaction. SOLID-STATE ELECTRONICS, 44(12), 2217–2223.
Vancouver
1.
ZHU S, QU X, Vanmeirhaeghe R, DETAVERNIER C, RU G, Cardon F, et al. Ballistic electron emission microscopy studies of the temperature dependence of Schottky barrier height distribution in CoSi2/n-Si(100) diodes formed by solid phase reaction. SOLID-STATE ELECTRONICS. 2000;44(12):2217–23.
MLA
ZHU, SY, XP QU, Roland Vanmeirhaeghe, et al. “Ballistic Electron Emission Microscopy Studies of the Temperature Dependence of Schottky Barrier Height Distribution in CoSi2/n-Si(100) Diodes Formed by Solid Phase Reaction.” SOLID-STATE ELECTRONICS 44.12 (2000): 2217–2223. Print.