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Ballistic electron emission microscopy studies of the temperature dependence of Schottky barrier height distribution in CoSi2/n-Si(1 0 0) diodes formed by solid phase reaction

(2000) SOLID-STATE ELECTRONICS. 44(12). p.2217-2223
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Keywords
Schottky barrier height, ballistic electron emission microscopy, CoSi2/Si contact, temperature coefficient, COSI2, INTERFACES, SYSTEM, BEEM, SI

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Chicago
Zhu, Shiyang, Xin-Ping Qu, Roland Vanmeirhaeghe, Christophe Detavernier, Guo-Ping Ru, Felix Cardon, and Bing-Zong Li. 2000. “Ballistic Electron Emission Microscopy Studies of the Temperature Dependence of Schottky Barrier Height Distribution in CoSi2/n-Si(1 0 0) Diodes Formed by Solid Phase Reaction.” Solid-state Electronics 44 (12): 2217–2223.
APA
Zhu, Shiyang, Qu, X.-P., Vanmeirhaeghe, R., Detavernier, C., Ru, G.-P., Cardon, F., & Li, B.-Z. (2000). Ballistic electron emission microscopy studies of the temperature dependence of Schottky barrier height distribution in CoSi2/n-Si(1 0 0) diodes formed by solid phase reaction. SOLID-STATE ELECTRONICS, 44(12), 2217–2223.
Vancouver
1.
Zhu S, Qu X-P, Vanmeirhaeghe R, Detavernier C, Ru G-P, Cardon F, et al. Ballistic electron emission microscopy studies of the temperature dependence of Schottky barrier height distribution in CoSi2/n-Si(1 0 0) diodes formed by solid phase reaction. SOLID-STATE ELECTRONICS. 2000;44(12):2217–23.
MLA
Zhu, Shiyang, Xin-Ping Qu, Roland Vanmeirhaeghe, et al. “Ballistic Electron Emission Microscopy Studies of the Temperature Dependence of Schottky Barrier Height Distribution in CoSi2/n-Si(1 0 0) Diodes Formed by Solid Phase Reaction.” SOLID-STATE ELECTRONICS 44.12 (2000): 2217–2223. Print.
@article{167829,
  author       = {Zhu, Shiyang and Qu, Xin-Ping and Vanmeirhaeghe, Roland and Detavernier, Christophe and Ru, Guo-Ping and Cardon, Felix and Li, Bing-Zong},
  issn         = {0038-1101},
  journal      = {SOLID-STATE ELECTRONICS},
  keyword      = {Schottky barrier height,ballistic electron emission microscopy,CoSi2/Si contact,temperature coefficient,COSI2,INTERFACES,SYSTEM,BEEM,SI},
  language     = {eng},
  number       = {12},
  pages        = {2217--2223},
  title        = {Ballistic electron emission microscopy studies of the temperature dependence of Schottky barrier height distribution in CoSi2/n-Si(1 0 0) diodes formed by solid phase reaction},
  url          = {http://dx.doi.org/10.1016/S0038-1101(00)00195-7},
  volume       = {44},
  year         = {2000},
}

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