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Chicago
VELLAS, N, C GAQUIERE, Y GUHEL, M WERQUIN, D DUCATTEAU, B BBOUDART, JC DE JAEGER, et al. 2002. “High Power Performances of AlGaN/GaN HEMTs on Sapphire Substrate at F = 4 GHz.” In Proceedings of the IEEE GaAs 2002 Conference, 23-24 September 2002, Milano, Italy, 25–28.
APA
VELLAS, N., GAQUIERE, C., GUHEL, Y., WERQUIN, M., DUCATTEAU, D., BBOUDART, B., DE JAEGER, J., et al. (2002). High power performances of AlGaN/GaN HEMTs on sapphire substrate at F = 4 GHz. Proceedings of the IEEE GaAs 2002 Conference, 23-24 September 2002, Milano, Italy (pp. 25–28).
Vancouver
1.
VELLAS N, GAQUIERE C, GUHEL Y, WERQUIN M, DUCATTEAU D, BBOUDART B, et al. High power performances of AlGaN/GaN HEMTs on sapphire substrate at F = 4 GHz. Proceedings of the IEEE GaAs 2002 Conference, 23-24 September 2002, Milano, Italy. 2002. p. 25–8.
MLA
VELLAS, N, C GAQUIERE, Y GUHEL, et al. “High Power Performances of AlGaN/GaN HEMTs on Sapphire Substrate at F = 4 GHz.” Proceedings of the IEEE GaAs 2002 Conference, 23-24 September 2002, Milano, Italy. 2002. 25–28. Print.
@inproceedings{166878,
  author       = {VELLAS, N and GAQUIERE, C and GUHEL, Y and WERQUIN, M and DUCATTEAU, D and BBOUDART, B and DE JAEGER, JC and Bougrioua, Zahia and GERMAIN, M and Leys, Monique and Moerman, Ingrid and BORGHS, G},
  booktitle    = {Proceedings of the IEEE GaAs 2002 Conference, 23-24 September 2002, Milano, Italy},
  language     = {eng},
  pages        = {25--28},
  title        = {High power performances of AlGaN/GaN HEMTs on sapphire substrate at F = 4 GHz.},
  year         = {2002},
}