Determination of crystal misorientation in epitaxial lateral overgrowth of GaN.
- Author
- Wei Chen (UGent) , PJ MCNALLY, Koen Jacobs, T TUOMI, AN DANILEWSKY, ZR ZYTKIEWICZ, D LOWNEY, J KANATHARANA, L KNUUTTILA and J RIIKONEN
- Organization
Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-166671
- MLA
- Chen, Wei, PJ MCNALLY, Koen Jacobs, et al. “Determination of Crystal Misorientation in Epitaxial Lateral Overgrowth of GaN.” JOURNAL OF CRYSTAL GROWTH 243.1 (2002): 94–102. Print.
- APA
- Chen, Wei, MCNALLY, P., Jacobs, K., TUOMI, T., DANILEWSKY, A., ZYTKIEWICZ, Z., LOWNEY, D., et al. (2002). Determination of crystal misorientation in epitaxial lateral overgrowth of GaN. JOURNAL OF CRYSTAL GROWTH, 243(1), 94–102.
- Chicago author-date
- Chen, Wei, PJ MCNALLY, Koen Jacobs, T TUOMI, AN DANILEWSKY, ZR ZYTKIEWICZ, D LOWNEY, J KANATHARANA, L KNUUTTILA, and J RIIKONEN. 2002. “Determination of Crystal Misorientation in Epitaxial Lateral Overgrowth of GaN.” Journal of Crystal Growth 243 (1): 94–102.
- Chicago author-date (all authors)
- Chen, Wei, PJ MCNALLY, Koen Jacobs, T TUOMI, AN DANILEWSKY, ZR ZYTKIEWICZ, D LOWNEY, J KANATHARANA, L KNUUTTILA, and J RIIKONEN. 2002. “Determination of Crystal Misorientation in Epitaxial Lateral Overgrowth of GaN.” Journal of Crystal Growth 243 (1): 94–102.
- Vancouver
- 1.Chen W, MCNALLY P, Jacobs K, TUOMI T, DANILEWSKY A, ZYTKIEWICZ Z, et al. Determination of crystal misorientation in epitaxial lateral overgrowth of GaN. JOURNAL OF CRYSTAL GROWTH. 2002;243(1):94–102.
- IEEE
- [1]W. Chen et al., “Determination of crystal misorientation in epitaxial lateral overgrowth of GaN.,” JOURNAL OF CRYSTAL GROWTH, vol. 243, no. 1, pp. 94–102, 2002.
@article{166671,
author = {Chen, Wei and MCNALLY, PJ and Jacobs, Koen and TUOMI, T and DANILEWSKY, AN and ZYTKIEWICZ, ZR and LOWNEY, D and KANATHARANA, J and KNUUTTILA, L and RIIKONEN, J},
issn = {0022-0248},
journal = {JOURNAL OF CRYSTAL GROWTH},
language = {eng},
number = {1},
pages = {94--102},
title = {Determination of crystal misorientation in epitaxial lateral overgrowth of GaN.},
volume = {243},
year = {2002},
}