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Determination of crystal misorientation in epitaxial lateral overgrowth of GaN.

(2002) JOURNAL OF CRYSTAL GROWTH. 243(1). p.94-102
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MLA
Chen, Wei, PJ MCNALLY, Koen Jacobs, et al. “Determination of Crystal Misorientation in Epitaxial Lateral Overgrowth of GaN.” JOURNAL OF CRYSTAL GROWTH 243.1 (2002): 94–102. Print.
APA
Chen, Wei, MCNALLY, P., Jacobs, K., TUOMI, T., DANILEWSKY, A., ZYTKIEWICZ, Z., LOWNEY, D., et al. (2002). Determination of crystal misorientation in epitaxial lateral overgrowth of GaN. JOURNAL OF CRYSTAL GROWTH, 243(1), 94–102.
Chicago author-date
Chen, Wei, PJ MCNALLY, Koen Jacobs, T TUOMI, AN DANILEWSKY, ZR ZYTKIEWICZ, D LOWNEY, J KANATHARANA, L KNUUTTILA, and J RIIKONEN. 2002. “Determination of Crystal Misorientation in Epitaxial Lateral Overgrowth of GaN.” Journal of Crystal Growth 243 (1): 94–102.
Chicago author-date (all authors)
Chen, Wei, PJ MCNALLY, Koen Jacobs, T TUOMI, AN DANILEWSKY, ZR ZYTKIEWICZ, D LOWNEY, J KANATHARANA, L KNUUTTILA, and J RIIKONEN. 2002. “Determination of Crystal Misorientation in Epitaxial Lateral Overgrowth of GaN.” Journal of Crystal Growth 243 (1): 94–102.
Vancouver
1.
Chen W, MCNALLY P, Jacobs K, TUOMI T, DANILEWSKY A, ZYTKIEWICZ Z, et al. Determination of crystal misorientation in epitaxial lateral overgrowth of GaN. JOURNAL OF CRYSTAL GROWTH. 2002;243(1):94–102.
IEEE
[1]
W. Chen et al., “Determination of crystal misorientation in epitaxial lateral overgrowth of GaN.,” JOURNAL OF CRYSTAL GROWTH, vol. 243, no. 1, pp. 94–102, 2002.
@article{166671,
  author       = {Chen, Wei and MCNALLY, PJ and Jacobs, Koen and TUOMI, T and DANILEWSKY, AN and ZYTKIEWICZ, ZR and LOWNEY, D and KANATHARANA, J and KNUUTTILA, L and RIIKONEN, J},
  issn         = {0022-0248},
  journal      = {JOURNAL OF CRYSTAL GROWTH},
  language     = {eng},
  number       = {1},
  pages        = {94--102},
  title        = {Determination of crystal misorientation in epitaxial lateral overgrowth of GaN.},
  volume       = {243},
  year         = {2002},
}

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