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Free carrier mobility in AlGaN/GaN quantum wells

JL Farvacque, Zahia Bougrioua, F Carosella and Ingrid Moerman (UGent)
(2002) JOURNAL OF PHYSICS-CONDENSED MATTER. 14(48). p.13319-13328
Author
Organization
Abstract
Experimental results show that the free carrier mobility in AlGaN/GaN quantum wells strongly decreases with the carrier density. Using the dynamical theory, we show that this behaviour can be explained by a combination of phonon, carrier-carrier and interface defect scattering mechanisms.
Keywords
STATES, CHARGE, SCATTERING, DISLOCATIONS, HETEROSTRUCTURES, POLARIZATION, TRANSPORT-PROPERTIES, FIELD-EFFECT TRANSISTORS, 2-DIMENSIONAL ELECTRON-GAS

Citation

Please use this url to cite or link to this publication:

MLA
Farvacque, JL, et al. “Free Carrier Mobility in AlGaN/GaN Quantum Wells.” JOURNAL OF PHYSICS-CONDENSED MATTER, vol. 14, no. 48, 2002, pp. 13319–28, doi:10.1088/0953-8984/14/48/384.
APA
Farvacque, J., Bougrioua, Z., Carosella, F., & Moerman, I. (2002). Free carrier mobility in AlGaN/GaN quantum wells. JOURNAL OF PHYSICS-CONDENSED MATTER, 14(48), 13319–13328. https://doi.org/10.1088/0953-8984/14/48/384
Chicago author-date
Farvacque, JL, Zahia Bougrioua, F Carosella, and Ingrid Moerman. 2002. “Free Carrier Mobility in AlGaN/GaN Quantum Wells.” JOURNAL OF PHYSICS-CONDENSED MATTER 14 (48): 13319–28. https://doi.org/10.1088/0953-8984/14/48/384.
Chicago author-date (all authors)
Farvacque, JL, Zahia Bougrioua, F Carosella, and Ingrid Moerman. 2002. “Free Carrier Mobility in AlGaN/GaN Quantum Wells.” JOURNAL OF PHYSICS-CONDENSED MATTER 14 (48): 13319–13328. doi:10.1088/0953-8984/14/48/384.
Vancouver
1.
Farvacque J, Bougrioua Z, Carosella F, Moerman I. Free carrier mobility in AlGaN/GaN quantum wells. JOURNAL OF PHYSICS-CONDENSED MATTER. 2002;14(48):13319–28.
IEEE
[1]
J. Farvacque, Z. Bougrioua, F. Carosella, and I. Moerman, “Free carrier mobility in AlGaN/GaN quantum wells,” JOURNAL OF PHYSICS-CONDENSED MATTER, vol. 14, no. 48, pp. 13319–13328, 2002.
@article{166667,
  abstract     = {{Experimental results show that the free carrier mobility in AlGaN/GaN quantum wells strongly decreases with the carrier density. Using the dynamical theory, we show that this behaviour can be explained by a combination of phonon, carrier-carrier and interface defect scattering mechanisms.}},
  articleno    = {{PII S0953-8984(02)54175-8}},
  author       = {{Farvacque, JL and Bougrioua, Zahia and Carosella, F and Moerman, Ingrid}},
  issn         = {{0953-8984}},
  journal      = {{JOURNAL OF PHYSICS-CONDENSED MATTER}},
  keywords     = {{STATES,CHARGE,SCATTERING,DISLOCATIONS,HETEROSTRUCTURES,POLARIZATION,TRANSPORT-PROPERTIES,FIELD-EFFECT TRANSISTORS,2-DIMENSIONAL ELECTRON-GAS}},
  language     = {{eng}},
  location     = {{Bologna, Italy}},
  number       = {{48}},
  pages        = {{PII S0953-8984(02)54175-8:13319--PII S0953-8984(02)54175-8:13328}},
  title        = {{Free carrier mobility in AlGaN/GaN quantum wells}},
  url          = {{http://doi.org/10.1088/0953-8984/14/48/384}},
  volume       = {{14}},
  year         = {{2002}},
}
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