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Free carrier mobility in AlGaN/GaN quantum wells

JL Farvacque, Zahia Bougrioua, F Carosella and Ingrid Moerman UGent (2002) JOURNAL OF PHYSICS-CONDENSED MATTER. 14(48). p.13319-13328
abstract
Experimental results show that the free carrier mobility in AlGaN/GaN quantum wells strongly decreases with the carrier density. Using the dynamical theory, we show that this behaviour can be explained by a combination of phonon, carrier-carrier and interface defect scattering mechanisms.
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (proceedingsPaper)
publication status
published
subject
keyword
STATES, CHARGE, SCATTERING, DISLOCATIONS, HETEROSTRUCTURES, POLARIZATION, TRANSPORT-PROPERTIES, FIELD-EFFECT TRANSISTORS, 2-DIMENSIONAL ELECTRON-GAS
journal title
JOURNAL OF PHYSICS-CONDENSED MATTER
J. Phys.-Condes. Matter
volume
14
issue
48
article number
PII S0953-8984(02)54175-8
pages
13319 - 13328
conference name
Conference on Extended Defects in Semiconductors (EDS - 2002)
conference location
Bologna, Italy
conference start
2002-06-01
conference end
2002-06-06
Web of Science type
Proceedings Paper
Web of Science id
000180091100085
JCR category
PHYSICS, CONDENSED MATTER
JCR impact factor
1.775 (2002)
JCR rank
9/56 (2002)
JCR quartile
1 (2002)
ISSN
0953-8984
DOI
10.1088/0953-8984/14/48/384
language
English
UGent publication?
yes
classification
A1
id
166667
handle
http://hdl.handle.net/1854/LU-166667
date created
2004-01-14 13:40:00
date last changed
2016-12-21 15:41:13
@article{166667,
  abstract     = {Experimental results show that the free carrier mobility in AlGaN/GaN quantum wells strongly decreases with the carrier density. Using the dynamical theory, we show that this behaviour can be explained by a combination of phonon, carrier-carrier and interface defect scattering mechanisms.},
  articleno    = {PII S0953-8984(02)54175-8},
  author       = {Farvacque, JL and Bougrioua, Zahia and Carosella, F and Moerman, Ingrid},
  issn         = {0953-8984},
  journal      = {JOURNAL OF PHYSICS-CONDENSED MATTER},
  keyword      = {STATES,CHARGE,SCATTERING,DISLOCATIONS,HETEROSTRUCTURES,POLARIZATION,TRANSPORT-PROPERTIES,FIELD-EFFECT TRANSISTORS,2-DIMENSIONAL ELECTRON-GAS},
  language     = {eng},
  location     = {Bologna, Italy},
  number       = {48},
  pages        = {PII S0953-8984(02)54175-8:13319--PII S0953-8984(02)54175-8:13328},
  title        = {Free carrier mobility in AlGaN/GaN quantum wells},
  url          = {http://dx.doi.org/10.1088/0953-8984/14/48/384},
  volume       = {14},
  year         = {2002},
}

Chicago
Farvacque, JL, Zahia Bougrioua, F Carosella, and Ingrid Moerman. 2002. “Free Carrier Mobility in AlGaN/GaN Quantum Wells.” Journal of Physics-condensed Matter 14 (48): 13319–13328.
APA
Farvacque, J., Bougrioua, Z., Carosella, F., & Moerman, I. (2002). Free carrier mobility in AlGaN/GaN quantum wells. JOURNAL OF PHYSICS-CONDENSED MATTER, 14(48), 13319–13328. Presented at the Conference on Extended Defects in Semiconductors (EDS - 2002).
Vancouver
1.
Farvacque J, Bougrioua Z, Carosella F, Moerman I. Free carrier mobility in AlGaN/GaN quantum wells. JOURNAL OF PHYSICS-CONDENSED MATTER. 2002;14(48):13319–28.
MLA
Farvacque, JL, Zahia Bougrioua, F Carosella, et al. “Free Carrier Mobility in AlGaN/GaN Quantum Wells.” JOURNAL OF PHYSICS-CONDENSED MATTER 14.48 (2002): 13319–13328. Print.