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Free carrier mobility in AlGaN/GaN quantum wells

(2002) JOURNAL OF PHYSICS-CONDENSED MATTER. 14(48). p.13319-13328
Author
Organization
Abstract
Experimental results show that the free carrier mobility in AlGaN/GaN quantum wells strongly decreases with the carrier density. Using the dynamical theory, we show that this behaviour can be explained by a combination of phonon, carrier-carrier and interface defect scattering mechanisms.
Keywords
STATES, CHARGE, SCATTERING, DISLOCATIONS, HETEROSTRUCTURES, POLARIZATION, TRANSPORT-PROPERTIES, FIELD-EFFECT TRANSISTORS, 2-DIMENSIONAL ELECTRON-GAS

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Chicago
Farvacque, JL, Zahia Bougrioua, F Carosella, and Ingrid Moerman. 2002. “Free Carrier Mobility in AlGaN/GaN Quantum Wells.” Journal of Physics-condensed Matter 14 (48): 13319–13328.
APA
Farvacque, J., Bougrioua, Z., Carosella, F., & Moerman, I. (2002). Free carrier mobility in AlGaN/GaN quantum wells. JOURNAL OF PHYSICS-CONDENSED MATTER, 14(48), 13319–13328. Presented at the Conference on Extended Defects in Semiconductors (EDS - 2002).
Vancouver
1.
Farvacque J, Bougrioua Z, Carosella F, Moerman I. Free carrier mobility in AlGaN/GaN quantum wells. JOURNAL OF PHYSICS-CONDENSED MATTER. 2002;14(48):13319–28.
MLA
Farvacque, JL, Zahia Bougrioua, F Carosella, et al. “Free Carrier Mobility in AlGaN/GaN Quantum Wells.” JOURNAL OF PHYSICS-CONDENSED MATTER 14.48 (2002): 13319–13328. Print.
@article{166667,
  abstract     = {Experimental results show that the free carrier mobility in AlGaN/GaN quantum wells strongly decreases with the carrier density. Using the dynamical theory, we show that this behaviour can be explained by a combination of phonon, carrier-carrier and interface defect scattering mechanisms.},
  articleno    = {PII S0953-8984(02)54175-8},
  author       = {Farvacque, JL and Bougrioua, Zahia and Carosella, F and Moerman, Ingrid},
  issn         = {0953-8984},
  journal      = {JOURNAL OF PHYSICS-CONDENSED MATTER},
  keyword      = {STATES,CHARGE,SCATTERING,DISLOCATIONS,HETEROSTRUCTURES,POLARIZATION,TRANSPORT-PROPERTIES,FIELD-EFFECT TRANSISTORS,2-DIMENSIONAL ELECTRON-GAS},
  language     = {eng},
  location     = {Bologna, Italy},
  number       = {48},
  pages        = {PII S0953-8984(02)54175-8:13319--PII S0953-8984(02)54175-8:13328},
  title        = {Free carrier mobility in AlGaN/GaN quantum wells},
  url          = {http://dx.doi.org/10.1088/0953-8984/14/48/384},
  volume       = {14},
  year         = {2002},
}

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