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Influence of process technology on DC-performance of GaN-based HFETs.

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Chicago
MISTELE, D, T ROTTER, Zahia Bougrioua, M MARSO, H ROLL, H KLAUSING, F FEDLER, et al. 2002. “Influence of Process Technology on DC-performance of GaN-based HFETs.” Physica Status Solidi A-applied Research 194 (2): 452–455.
APA
MISTELE, D., ROTTER, T., Bougrioua, Z., MARSO, M., ROLL, H., KLAUSING, H., FEDLER, F., et al. (2002). Influence of process technology on DC-performance of GaN-based HFETs. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 194(2), 452–455.
Vancouver
1.
MISTELE D, ROTTER T, Bougrioua Z, MARSO M, ROLL H, KLAUSING H, et al. Influence of process technology on DC-performance of GaN-based HFETs. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH. 2002;194(2):452–5.
MLA
MISTELE, D, T ROTTER, Zahia Bougrioua, et al. “Influence of Process Technology on DC-performance of GaN-based HFETs.” PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 194.2 (2002): 452–455. Print.
@article{166656,
  author       = {MISTELE, D and ROTTER, T and Bougrioua, Zahia and MARSO, M and ROLL, H and KLAUSING, H and FEDLER, F and SEMCHINOVA, O and ADERHOLD, J and Moerman, Ingrid and GRAUL, J},
  issn         = {0031-8965},
  journal      = {PHYSICA STATUS SOLIDI A-APPLIED RESEARCH},
  language     = {eng},
  number       = {2},
  pages        = {452--455},
  title        = {Influence of process technology on DC-performance of GaN-based HFETs.},
  volume       = {194},
  year         = {2002},
}

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