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A photoelectrochemical study of InxGa1-xN films

Author
Organization
Keywords
DEVICES, DIODES, BEHAVIOR, TRANSITION, PHOTOCURRENT, HETEROSTRUCTURES, INGAN, N-GAAS, SEMICONDUCTOR ELECTRODES, PERSISTENT PHOTOCONDUCTIVITY

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Chicago
Theuwis, Antoon, Katrien Strubbe, Liesbet Depestel, and Walter Gomes. 2002. “A Photoelectrochemical Study of InxGa1-xN Films.” Journal of the Electrochemical Society 149 (5): E173–E178.
APA
Theuwis, A., Strubbe, K., Depestel, L., & Gomes, W. (2002). A photoelectrochemical study of InxGa1-xN films. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 149(5), E173–E178.
Vancouver
1.
Theuwis A, Strubbe K, Depestel L, Gomes W. A photoelectrochemical study of InxGa1-xN films. JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 2002;149(5):E173–E178.
MLA
Theuwis, Antoon, Katrien Strubbe, Liesbet Depestel, et al. “A Photoelectrochemical Study of InxGa1-xN Films.” JOURNAL OF THE ELECTROCHEMICAL SOCIETY 149.5 (2002): E173–E178. Print.
@article{162351,
  author       = {Theuwis, Antoon and Strubbe, Katrien and Depestel, Liesbet and Gomes, Walter},
  issn         = {0013-4651},
  journal      = {JOURNAL OF THE ELECTROCHEMICAL SOCIETY},
  keyword      = {DEVICES,DIODES,BEHAVIOR,TRANSITION,PHOTOCURRENT,HETEROSTRUCTURES,INGAN,N-GAAS,SEMICONDUCTOR ELECTRODES,PERSISTENT PHOTOCONDUCTIVITY},
  language     = {eng},
  number       = {5},
  pages        = {E173--E178},
  title        = {A photoelectrochemical study of InxGa1-xN films},
  url          = {http://dx.doi.org/10.1149/1.1468647},
  volume       = {149},
  year         = {2002},
}

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