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A BEEM study on the effects of the annealing temperature on barrier height inhomogeneity of CoSi2/Si contact formed in Co-Ti-Si systems.

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Chicago
ZHU, SY, XP QU, GP RU, BZ LI, Christophe Detavernier, Roland Vanmeirhaeghe, and Felix Cardon. 2002. “A BEEM Study on the Effects of the Annealing Temperature on Barrier Height Inhomogeneity of CoSi2/Si Contact Formed in Co-Ti-Si Systems.” Chinese Journal of Semiconductors 23: 6–9.
APA
ZHU, SY, QU, X., RU, G., LI, B., Detavernier, C., Vanmeirhaeghe, R., & Cardon, F. (2002). A BEEM study on the effects of the annealing temperature on barrier height inhomogeneity of CoSi2/Si contact formed in Co-Ti-Si systems. CHINESE JOURNAL OF SEMICONDUCTORS, 23, 6–9.
Vancouver
1.
ZHU S, QU X, RU G, LI B, Detavernier C, Vanmeirhaeghe R, et al. A BEEM study on the effects of the annealing temperature on barrier height inhomogeneity of CoSi2/Si contact formed in Co-Ti-Si systems. CHINESE JOURNAL OF SEMICONDUCTORS. 2002;23:6–9.
MLA
ZHU, SY, XP QU, GP RU, et al. “A BEEM Study on the Effects of the Annealing Temperature on Barrier Height Inhomogeneity of CoSi2/Si Contact Formed in Co-Ti-Si Systems.” CHINESE JOURNAL OF SEMICONDUCTORS 23 (2002): 6–9. Print.
@article{162109,
  author       = {ZHU, SY and QU, XP and RU, GP and LI, BZ and Detavernier, Christophe and Vanmeirhaeghe, Roland and Cardon, Felix},
  issn         = {0899-9988},
  journal      = {CHINESE JOURNAL OF SEMICONDUCTORS},
  language     = {eng},
  pages        = {6--9},
  title        = {A BEEM study on the effects of the annealing temperature on barrier height inhomogeneity of CoSi2/Si contact formed in Co-Ti-Si systems.},
  volume       = {23},
  year         = {2002},
}