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A BEEM study on the effects of the annealing temperature on barrier height inhomogeneity of CoSi2/Si contact formed in Co-Ti-Si systems.

SY ZHU, XP QU, GP RU, BZ LI, Christophe Detavernier UGent, Roland Vanmeirhaeghe and Felix Cardon (2002) CHINESE JOURNAL OF SEMICONDUCTORS. 23. p.6-9
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle
publication status
published
subject
journal title
CHINESE JOURNAL OF SEMICONDUCTORS
Chin. J. Semicond.
volume
23
pages
6-9 pages
ISSN
0899-9988
language
English
UGent publication?
yes
classification
A2
id
162109
handle
http://hdl.handle.net/1854/LU-162109
date created
2004-01-14 13:39:00
date last changed
2016-12-19 15:38:58
@article{162109,
  author       = {ZHU, SY and QU, XP and RU, GP and LI, BZ and Detavernier, Christophe and Vanmeirhaeghe, Roland and Cardon, Felix},
  issn         = {0899-9988},
  journal      = {CHINESE JOURNAL OF SEMICONDUCTORS},
  language     = {eng},
  pages        = {6--9},
  title        = {A BEEM study on the effects of the annealing temperature on barrier height inhomogeneity of CoSi2/Si contact formed in Co-Ti-Si systems.},
  volume       = {23},
  year         = {2002},
}

Chicago
ZHU, SY, XP QU, GP RU, BZ LI, Christophe Detavernier, Roland Vanmeirhaeghe, and Felix Cardon. 2002. “A BEEM Study on the Effects of the Annealing Temperature on Barrier Height Inhomogeneity of CoSi2/Si Contact Formed in Co-Ti-Si Systems.” Chinese Journal of Semiconductors 23: 6–9.
APA
ZHU, SY, QU, X., RU, G., LI, B., Detavernier, C., Vanmeirhaeghe, R., & Cardon, F. (2002). A BEEM study on the effects of the annealing temperature on barrier height inhomogeneity of CoSi2/Si contact formed in Co-Ti-Si systems. CHINESE JOURNAL OF SEMICONDUCTORS, 23, 6–9.
Vancouver
1.
ZHU S, QU X, RU G, LI B, Detavernier C, Vanmeirhaeghe R, et al. A BEEM study on the effects of the annealing temperature on barrier height inhomogeneity of CoSi2/Si contact formed in Co-Ti-Si systems. CHINESE JOURNAL OF SEMICONDUCTORS. 2002;23:6–9.
MLA
ZHU, SY, XP QU, GP RU, et al. “A BEEM Study on the Effects of the Annealing Temperature on Barrier Height Inhomogeneity of CoSi2/Si Contact Formed in Co-Ti-Si Systems.” CHINESE JOURNAL OF SEMICONDUCTORS 23 (2002): 6–9. Print.