Advanced search

Double threshold behaviour of I-V characteristics of CoSi2/Si Schottky contacts.

(2002) CHINESE PHYSICS. 11(2). p.156-162
Author
Organization

Citation

Please use this url to cite or link to this publication:

Chicago
ZHU, SY, GP RU, XP QU, BZ LI, Roland Vanmeirhaeghe, Christophe Detavernier, and Felix Cardon. 2002. “Double Threshold Behaviour of I-V Characteristics of CoSi2/Si Schottky Contacts.” Chinese Physics 11 (2): 156–162.
APA
ZHU, SY, RU, G., QU, X., LI, B., Vanmeirhaeghe, R., Detavernier, C., & Cardon, F. (2002). Double threshold behaviour of I-V characteristics of CoSi2/Si Schottky contacts. CHINESE PHYSICS, 11(2), 156–162.
Vancouver
1.
ZHU S, RU G, QU X, LI B, Vanmeirhaeghe R, Detavernier C, et al. Double threshold behaviour of I-V characteristics of CoSi2/Si Schottky contacts. CHINESE PHYSICS. 2002;11(2):156–62.
MLA
ZHU, SY, GP RU, XP QU, et al. “Double Threshold Behaviour of I-V Characteristics of CoSi2/Si Schottky Contacts.” CHINESE PHYSICS 11.2 (2002): 156–162. Print.
@article{162103,
  author       = {ZHU, SY and RU, GP and QU, XP and LI, BZ and Vanmeirhaeghe, Roland and Detavernier, Christophe and Cardon, Felix},
  issn         = {1009-1963},
  journal      = {CHINESE PHYSICS},
  language     = {eng},
  number       = {2},
  pages        = {156--162},
  title        = {Double threshold behaviour of I-V characteristics of CoSi2/Si Schottky contacts.},
  volume       = {11},
  year         = {2002},
}

Web of Science
Times cited: