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Double threshold behaviour of I-V characteristics of CoSi2/Si Schottky contacts.

SY ZHU, GP RU, XP QU, BZ LI, Roland Vanmeirhaeghe, Christophe Detavernier UGent and Felix Cardon (2002) CHINESE PHYSICS. 11(2). p.156-162
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (original)
publication status
published
subject
journal title
CHINESE PHYSICS
volume
11
issue
2
pages
156-162 pages
Web of Science type
Article
Web of Science id
000174191300010
JCR category
PHYSICS, MULTIDISCIPLINARY
JCR impact factor
1.185 (2002)
JCR rank
25/67 (2002)
JCR quartile
2 (2002)
ISSN
1009-1963
language
English
UGent publication?
yes
classification
A1
id
162103
handle
http://hdl.handle.net/1854/LU-162103
date created
2004-01-14 13:39:00
date last changed
2016-12-19 15:38:24
@article{162103,
  author       = {ZHU, SY and RU, GP and QU, XP and LI, BZ and Vanmeirhaeghe, Roland and Detavernier, Christophe and Cardon, Felix},
  issn         = {1009-1963},
  journal      = {CHINESE PHYSICS},
  language     = {eng},
  number       = {2},
  pages        = {156--162},
  title        = {Double threshold behaviour of I-V characteristics of CoSi2/Si Schottky contacts.},
  volume       = {11},
  year         = {2002},
}

Chicago
ZHU, SY, GP RU, XP QU, BZ LI, Roland Vanmeirhaeghe, Christophe Detavernier, and Felix Cardon. 2002. “Double Threshold Behaviour of I-V Characteristics of CoSi2/Si Schottky Contacts.” Chinese Physics 11 (2): 156–162.
APA
ZHU, SY, RU, G., QU, X., LI, B., Vanmeirhaeghe, R., Detavernier, C., & Cardon, F. (2002). Double threshold behaviour of I-V characteristics of CoSi2/Si Schottky contacts. CHINESE PHYSICS, 11(2), 156–162.
Vancouver
1.
ZHU S, RU G, QU X, LI B, Vanmeirhaeghe R, Detavernier C, et al. Double threshold behaviour of I-V characteristics of CoSi2/Si Schottky contacts. CHINESE PHYSICS. 2002;11(2):156–62.
MLA
ZHU, SY, GP RU, XP QU, et al. “Double Threshold Behaviour of I-V Characteristics of CoSi2/Si Schottky Contacts.” CHINESE PHYSICS 11.2 (2002): 156–162. Print.