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Cost effective implementation of a 90 V RESURF P-type Drain extended MOS in a 0.35 um based smart power technology.

Benoit Bakeroot UGent, Miguel Vermandel, Jan Doutreloigne UGent, Peter Moens and D BOLOGNESI (2002) Proceedings of the 32nd European Solid-State Device Research Conference (ESSDERC), Firenze, Italy, 2002. p.291-294
Please use this url to cite or link to this publication:
author
organization
year
type
conference
publication status
published
subject
in
Proceedings of the 32nd European Solid-State Device Research Conference (ESSDERC), Firenze, Italy, 2002
pages
291-294 pages
language
English
UGent publication?
yes
classification
C1
id
160481
handle
http://hdl.handle.net/1854/LU-160481
date created
2004-01-14 13:39:00
date last changed
2016-12-19 15:34:58
@inproceedings{160481,
  author       = {Bakeroot, Benoit and Vermandel, Miguel and Doutreloigne, Jan and Moens, Peter and BOLOGNESI, D},
  booktitle    = {Proceedings of the 32nd European Solid-State Device Research Conference (ESSDERC), Firenze, Italy, 2002},
  language     = {eng},
  pages        = {291--294},
  title        = {Cost effective implementation of a 90 V RESURF P-type Drain extended MOS in a 0.35 um based smart power technology.},
  year         = {2002},
}

Chicago
Bakeroot, Benoit, Miguel Vermandel, Jan Doutreloigne, Peter Moens, and D BOLOGNESI. 2002. “Cost Effective Implementation of a 90 V RESURF P-type Drain Extended MOS in a 0.35 Um Based Smart Power Technology.” In Proceedings of the 32nd European Solid-State Device Research Conference (ESSDERC), Firenze, Italy, 2002, 291–294.
APA
Bakeroot, B., Vermandel, M., Doutreloigne, J., Moens, P., & BOLOGNESI, D. (2002). Cost effective implementation of a 90 V RESURF P-type Drain extended MOS in a 0.35 um based smart power technology. Proceedings of the 32nd European Solid-State Device Research Conference (ESSDERC), Firenze, Italy, 2002 (pp. 291–294).
Vancouver
1.
Bakeroot B, Vermandel M, Doutreloigne J, Moens P, BOLOGNESI D. Cost effective implementation of a 90 V RESURF P-type Drain extended MOS in a 0.35 um based smart power technology. Proceedings of the 32nd European Solid-State Device Research Conference (ESSDERC), Firenze, Italy, 2002. 2002. p. 291–4.
MLA
Bakeroot, Benoit, Miguel Vermandel, Jan Doutreloigne, et al. “Cost Effective Implementation of a 90 V RESURF P-type Drain Extended MOS in a 0.35 Um Based Smart Power Technology.” Proceedings of the 32nd European Solid-State Device Research Conference (ESSDERC), Firenze, Italy, 2002. 2002. 291–294. Print.