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Atomic layer deposition of ZnS thin films based on diethyl zinc and hydrogen sulfide.

Gert Stuyven, Patrick De Visschere UGent, Andriy Hikavyy and Kristiaan Neyts UGent (2002) JOURNAL OF CRYSTAL GROWTH. 234(4). p.690-698
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (original)
publication status
published
subject
journal title
JOURNAL OF CRYSTAL GROWTH
J. Cryst. Growth
volume
234
issue
4
pages
690-698 pages
Web of Science type
Article
Web of Science id
000173057700012
JCR category
CRYSTALLOGRAPHY
JCR impact factor
1.529 (2002)
JCR rank
7/20 (2002)
JCR quartile
2 (2002)
ISSN
0022-0248
language
English
UGent publication?
yes
classification
A1
id
160462
handle
http://hdl.handle.net/1854/LU-160462
date created
2004-01-14 13:39:00
date last changed
2016-12-19 15:38:41
@article{160462,
  author       = {Stuyven, Gert and De Visschere, Patrick and Hikavyy, Andriy and Neyts, Kristiaan},
  issn         = {0022-0248},
  journal      = {JOURNAL OF CRYSTAL GROWTH},
  language     = {eng},
  number       = {4},
  pages        = {690--698},
  title        = {Atomic layer deposition of ZnS thin films based on diethyl zinc and hydrogen sulfide.},
  volume       = {234},
  year         = {2002},
}

Chicago
Stuyven, Gert, Patrick De Visschere, Andriy Hikavyy, and Kristiaan Neyts. 2002. “Atomic Layer Deposition of ZnS Thin Films Based on Diethyl Zinc and Hydrogen Sulfide.” Journal of Crystal Growth 234 (4): 690–698.
APA
Stuyven, G., De Visschere, P., Hikavyy, A., & Neyts, K. (2002). Atomic layer deposition of ZnS thin films based on diethyl zinc and hydrogen sulfide. JOURNAL OF CRYSTAL GROWTH, 234(4), 690–698.
Vancouver
1.
Stuyven G, De Visschere P, Hikavyy A, Neyts K. Atomic layer deposition of ZnS thin films based on diethyl zinc and hydrogen sulfide. JOURNAL OF CRYSTAL GROWTH. 2002;234(4):690–8.
MLA
Stuyven, Gert, Patrick De Visschere, Andriy Hikavyy, et al. “Atomic Layer Deposition of ZnS Thin Films Based on Diethyl Zinc and Hydrogen Sulfide.” JOURNAL OF CRYSTAL GROWTH 234.4 (2002): 690–698. Print.