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Using Adaptive Resurf technique and field plate working to improve the safe operating area of n-type drain extended MOS transistors.

Benoit Bakeroot UGent, Peter Moens, Miguel Vermandel and Jan Doutreloigne UGent (2001) Proceedings of the fourth International Conference on Modeling and Simulation of Microsystems, Hilton Head Island, 2001. p.498-501
Please use this url to cite or link to this publication:
author
organization
year
type
conference
publication status
published
subject
in
Proceedings of the fourth International Conference on Modeling and Simulation of Microsystems, Hilton Head Island, 2001
pages
498-501 pages
language
English
UGent publication?
yes
classification
C1
id
144043
handle
http://hdl.handle.net/1854/LU-144043
date created
2004-01-14 13:38:00
date last changed
2016-12-19 15:35:49
@inproceedings{144043,
  author       = {Bakeroot, Benoit and Moens, Peter and Vermandel, Miguel and Doutreloigne, Jan},
  booktitle    = {Proceedings of the fourth International Conference on Modeling and Simulation of Microsystems, Hilton Head Island, 2001},
  language     = {eng},
  pages        = {498--501},
  title        = {Using Adaptive Resurf technique and field plate working to improve the safe operating area of n-type drain extended MOS transistors.},
  year         = {2001},
}

Chicago
Bakeroot, Benoit, Peter Moens, Miguel Vermandel, and Jan Doutreloigne. 2001. “Using Adaptive Resurf Technique and Field Plate Working to Improve the Safe Operating Area of N-type Drain Extended MOS Transistors.” In Proceedings of the Fourth International Conference on Modeling and Simulation of Microsystems, Hilton Head Island, 2001, 498–501.
APA
Bakeroot, B., Moens, P., Vermandel, M., & Doutreloigne, J. (2001). Using Adaptive Resurf technique and field plate working to improve the safe operating area of n-type drain extended MOS transistors. Proceedings of the fourth International Conference on Modeling and Simulation of Microsystems, Hilton Head Island, 2001 (pp. 498–501).
Vancouver
1.
Bakeroot B, Moens P, Vermandel M, Doutreloigne J. Using Adaptive Resurf technique and field plate working to improve the safe operating area of n-type drain extended MOS transistors. Proceedings of the fourth International Conference on Modeling and Simulation of Microsystems, Hilton Head Island, 2001. 2001. p. 498–501.
MLA
Bakeroot, Benoit, Peter Moens, Miguel Vermandel, et al. “Using Adaptive Resurf Technique and Field Plate Working to Improve the Safe Operating Area of N-type Drain Extended MOS Transistors.” Proceedings of the Fourth International Conference on Modeling and Simulation of Microsystems, Hilton Head Island, 2001. 2001. 498–501. Print.