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Using Adaptive Resurf technique and field plate working to improve the safe operating area of n-type drain extended MOS transistors.

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Chicago
Bakeroot, Benoit, Peter Moens, Miguel Vermandel, and Jan Doutreloigne. 2001. “Using Adaptive Resurf Technique and Field Plate Working to Improve the Safe Operating Area of N-type Drain Extended MOS Transistors.” In Proceedings of the Fourth International Conference on Modeling and Simulation of Microsystems, Hilton Head Island, 2001, 498–501.
APA
Bakeroot, B., Moens, P., Vermandel, M., & Doutreloigne, J. (2001). Using Adaptive Resurf technique and field plate working to improve the safe operating area of n-type drain extended MOS transistors. Proceedings of the fourth International Conference on Modeling and Simulation of Microsystems, Hilton Head Island, 2001 (pp. 498–501).
Vancouver
1.
Bakeroot B, Moens P, Vermandel M, Doutreloigne J. Using Adaptive Resurf technique and field plate working to improve the safe operating area of n-type drain extended MOS transistors. Proceedings of the fourth International Conference on Modeling and Simulation of Microsystems, Hilton Head Island, 2001. 2001. p. 498–501.
MLA
Bakeroot, Benoit, Peter Moens, Miguel Vermandel, et al. “Using Adaptive Resurf Technique and Field Plate Working to Improve the Safe Operating Area of N-type Drain Extended MOS Transistors.” Proceedings of the Fourth International Conference on Modeling and Simulation of Microsystems, Hilton Head Island, 2001. 2001. 498–501. Print.
@inproceedings{144043,
  author       = {Bakeroot, Benoit and Moens, Peter and Vermandel, Miguel and Doutreloigne, Jan},
  booktitle    = {Proceedings of the fourth International Conference on Modeling and Simulation of Microsystems, Hilton Head Island, 2001},
  language     = {eng},
  pages        = {498--501},
  title        = {Using Adaptive Resurf technique and field plate working to improve the safe operating area of n-type drain extended MOS transistors.},
  year         = {2001},
}