Advanced search

Zn doping of InP, InAsP/InP, and InAsP/InGaAs heterostructures through metalorganic vapor phase diffusion (MOVPD).

Author
Organization

Citation

Please use this url to cite or link to this publication:

Chicago
Vanhollebeke, Koen, Mark D’Hondt, Ingrid Moerman, Peter Van Daele, and Piet Demeester. 2001. “Zn Doping of InP, InAsP/InP, and InAsP/InGaAs Heterostructures Through Metalorganic Vapor Phase Diffusion (MOVPD).” Journal of Electronic Materials 30 (8): 951–959.
APA
Vanhollebeke, K., D’Hondt, M., Moerman, I., Van Daele, P., & Demeester, P. (2001). Zn doping of InP, InAsP/InP, and InAsP/InGaAs heterostructures through metalorganic vapor phase diffusion (MOVPD). JOURNAL OF ELECTRONIC MATERIALS, 30(8), 951–959.
Vancouver
1.
Vanhollebeke K, D’Hondt M, Moerman I, Van Daele P, Demeester P. Zn doping of InP, InAsP/InP, and InAsP/InGaAs heterostructures through metalorganic vapor phase diffusion (MOVPD). JOURNAL OF ELECTRONIC MATERIALS. 2001;30(8):951–9.
MLA
Vanhollebeke, Koen, Mark D’Hondt, Ingrid Moerman, et al. “Zn Doping of InP, InAsP/InP, and InAsP/InGaAs Heterostructures Through Metalorganic Vapor Phase Diffusion (MOVPD).” JOURNAL OF ELECTRONIC MATERIALS 30.8 (2001): 951–959. Print.
@article{143966,
  author       = {Vanhollebeke, Koen and D'Hondt, Mark and Moerman, Ingrid and Van Daele, Peter and Demeester, Piet},
  issn         = {0361-5235},
  journal      = {JOURNAL OF ELECTRONIC MATERIALS},
  language     = {eng},
  number       = {8},
  pages        = {951--959},
  title        = {Zn doping of InP, InAsP/InP, and InAsP/InGaAs heterostructures through metalorganic vapor phase diffusion (MOVPD).},
  volume       = {30},
  year         = {2001},
}

Web of Science
Times cited: