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Chemical mapping of InGaN MQWs.

(2001) JOURNAL OF CRYSTAL GROWTH. 230(3-4). p.438-441
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MLA
SHARMA, N, D TRICKER, Paul Thomas, et al. “Chemical Mapping of InGaN MQWs.” JOURNAL OF CRYSTAL GROWTH 230.3-4 (2001): 438–441. Print.
APA
SHARMA, N., TRICKER, D., Thomas, P., Bougrioua, Z., Jacobs, K., CHEYNS, J., Moerman, I., et al. (2001). Chemical mapping of InGaN MQWs. JOURNAL OF CRYSTAL GROWTH, 230(3-4), 438–441.
Chicago author-date
SHARMA, N, D TRICKER, Paul Thomas, Zahia Bougrioua, Koen Jacobs, J CHEYNS, Ingrid Moerman, et al. 2001. “Chemical Mapping of InGaN MQWs.” Journal of Crystal Growth 230 (3-4): 438–441.
Chicago author-date (all authors)
SHARMA, N, D TRICKER, Paul Thomas, Zahia Bougrioua, Koen Jacobs, J CHEYNS, Ingrid Moerman, T THRUSH, L CONSIDINE, A BOYD, and C HUMPHREYS. 2001. “Chemical Mapping of InGaN MQWs.” Journal of Crystal Growth 230 (3-4): 438–441.
Vancouver
1.
SHARMA N, TRICKER D, Thomas P, Bougrioua Z, Jacobs K, CHEYNS J, et al. Chemical mapping of InGaN MQWs. JOURNAL OF CRYSTAL GROWTH. 2001;230(3-4):438–41.
IEEE
[1]
N. SHARMA et al., “Chemical mapping of InGaN MQWs.,” JOURNAL OF CRYSTAL GROWTH, vol. 230, no. 3–4, pp. 438–441, 2001.
@article{143912,
  author       = {SHARMA, N and TRICKER, D and Thomas, Paul and Bougrioua, Zahia and Jacobs, Koen and CHEYNS, J and Moerman, Ingrid and THRUSH, T and CONSIDINE, L and BOYD, A and HUMPHREYS, C},
  issn         = {0022-0248},
  journal      = {JOURNAL OF CRYSTAL GROWTH},
  language     = {eng},
  number       = {3-4},
  pages        = {438--441},
  title        = {Chemical mapping of InGaN MQWs.},
  volume       = {230},
  year         = {2001},
}

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