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High-efficiency thin-film light-emitting diodes at 650 nm.

C ROOMAN, R WINDISCH, Mark D'Hondt, B DUTTA, Prasanta Modak, P MIJLEMANS, G BORGHS, Roger Vounckx UGent, Ingrid Moerman UGent, Maarten Kuijk UGent, et al. (2001) ELECTRONICS LETTERS. 37(13). p.852-853
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (original)
publication status
published
subject
journal title
ELECTRONICS LETTERS
Electron. Lett.
volume
37
issue
13
pages
852-853 pages
Web of Science type
Article
Web of Science id
000169697100033
JCR category
ENGINEERING, ELECTRICAL & ELECTRONIC
JCR impact factor
0.97 (2001)
JCR rank
52/198 (2001)
JCR quartile
2 (2001)
ISSN
0013-5194
language
English
UGent publication?
yes
classification
A1
id
143901
handle
http://hdl.handle.net/1854/LU-143901
date created
2004-01-14 13:38:00
date last changed
2016-12-19 15:38:17
@article{143901,
  author       = {ROOMAN, C and WINDISCH, R and D'Hondt, Mark and DUTTA, B and Modak, Prasanta and MIJLEMANS, P and BORGHS, G and Vounckx, Roger and Moerman, Ingrid and Kuijk, Maarten and HEREMANS, P},
  issn         = {0013-5194},
  journal      = {ELECTRONICS LETTERS},
  language     = {eng},
  number       = {13},
  pages        = {852--853},
  title        = {High-efficiency thin-film light-emitting diodes at 650 nm.},
  volume       = {37},
  year         = {2001},
}

Chicago
ROOMAN, C, R WINDISCH, Mark D’Hondt, B DUTTA, Prasanta Modak, P MIJLEMANS, G BORGHS, et al. 2001. “High-efficiency Thin-film Light-emitting Diodes at 650 Nm.” Electronics Letters 37 (13): 852–853.
APA
ROOMAN, C., WINDISCH, R., D’Hondt, M., DUTTA, B., Modak, P., MIJLEMANS, P., BORGHS, G., et al. (2001). High-efficiency thin-film light-emitting diodes at 650 nm. ELECTRONICS LETTERS, 37(13), 852–853.
Vancouver
1.
ROOMAN C, WINDISCH R, D’Hondt M, DUTTA B, Modak P, MIJLEMANS P, et al. High-efficiency thin-film light-emitting diodes at 650 nm. ELECTRONICS LETTERS. 2001;37(13):852–3.
MLA
ROOMAN, C, R WINDISCH, Mark D’Hondt, et al. “High-efficiency Thin-film Light-emitting Diodes at 650 Nm.” ELECTRONICS LETTERS 37.13 (2001): 852–853. Print.