Ghent University Academic Bibliography

Advanced

AlGaN/GaN-based MOSHFETs with different gate dielectrics and treatments

D MISTELE, T ROTTER, KS ROVER, S PAPROTTA, Zahia Bougrioua, F FEDLER, H KLAUSING, OK SEMCHINOVA, J STEMMER, J ADERHOLD, et al. (2001) MRS Fall Meeting 2001, Symposium I : GaN and related alloys, November 26-30, 2001, Boston, Massachusetts, USA.
Please use this url to cite or link to this publication:
author
organization
year
type
conference
publication status
published
subject
in
MRS Fall Meeting 2001, Symposium I : GaN and related alloys, November 26-30, 2001, Boston, Massachusetts, USA
pages
195 pages
language
English
UGent publication?
yes
classification
C1
id
143792
handle
http://hdl.handle.net/1854/LU-143792
date created
2004-01-14 13:38:00
date last changed
2016-12-19 15:35:49
@inproceedings{143792,
  author       = {MISTELE, D and ROTTER, T and ROVER, KS and PAPROTTA, S and Bougrioua, Zahia and FEDLER, F and KLAUSING, H and SEMCHINOVA, OK and STEMMER, J and ADERHOLD, J and GRAUL, J},
  booktitle    = {MRS Fall Meeting 2001, Symposium I : GaN and related alloys, November 26-30, 2001, Boston, Massachusetts, USA},
  language     = {eng},
  pages        = {195},
  title        = {AlGaN/GaN-based MOSHFETs with different gate dielectrics and treatments},
  year         = {2001},
}

Chicago
MISTELE, D, T ROTTER, KS ROVER, S PAPROTTA, Zahia Bougrioua, F FEDLER, H KLAUSING, et al. 2001. “AlGaN/GaN-based MOSHFETs with Different Gate Dielectrics and Treatments.” In MRS Fall Meeting 2001, Symposium I : GaN and Related Alloys, November 26-30, 2001, Boston, Massachusetts, USA, 195.
APA
MISTELE, D., ROTTER, T., ROVER, K., PAPROTTA, S., Bougrioua, Z., FEDLER, F., KLAUSING, H., et al. (2001). AlGaN/GaN-based MOSHFETs with different gate dielectrics and treatments. MRS Fall Meeting 2001, Symposium I : GaN and related alloys, November 26-30, 2001, Boston, Massachusetts, USA (p. 195).
Vancouver
1.
MISTELE D, ROTTER T, ROVER K, PAPROTTA S, Bougrioua Z, FEDLER F, et al. AlGaN/GaN-based MOSHFETs with different gate dielectrics and treatments. MRS Fall Meeting 2001, Symposium I : GaN and related alloys, November 26-30, 2001, Boston, Massachusetts, USA. 2001. p. 195.
MLA
MISTELE, D, T ROTTER, KS ROVER, et al. “AlGaN/GaN-based MOSHFETs with Different Gate Dielectrics and Treatments.” MRS Fall Meeting 2001, Symposium I : GaN and Related Alloys, November 26-30, 2001, Boston, Massachusetts, USA. 2001. 195. Print.