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Chicago
MISTELE, D, T ROTTER, KS ROVER, S PAPROTTA, Zahia Bougrioua, F FEDLER, H KLAUSING, et al. 2001. “AlGaN/GaN-based MOSHFETs with Different Gate Dielectrics and Treatments.” In MRS Fall Meeting 2001, Symposium I : GaN and Related Alloys, November 26-30, 2001, Boston, Massachusetts, USA, 195.
APA
MISTELE, D., ROTTER, T., ROVER, K., PAPROTTA, S., Bougrioua, Z., FEDLER, F., KLAUSING, H., et al. (2001). AlGaN/GaN-based MOSHFETs with different gate dielectrics and treatments. MRS Fall Meeting 2001, Symposium I : GaN and related alloys, November 26-30, 2001, Boston, Massachusetts, USA (p. 195).
Vancouver
1.
MISTELE D, ROTTER T, ROVER K, PAPROTTA S, Bougrioua Z, FEDLER F, et al. AlGaN/GaN-based MOSHFETs with different gate dielectrics and treatments. MRS Fall Meeting 2001, Symposium I : GaN and related alloys, November 26-30, 2001, Boston, Massachusetts, USA. 2001. p. 195.
MLA
MISTELE, D, T ROTTER, KS ROVER, et al. “AlGaN/GaN-based MOSHFETs with Different Gate Dielectrics and Treatments.” MRS Fall Meeting 2001, Symposium I : GaN and Related Alloys, November 26-30, 2001, Boston, Massachusetts, USA. 2001. 195. Print.
@inproceedings{143792,
  author       = {MISTELE, D and ROTTER, T and ROVER, KS and PAPROTTA, S and Bougrioua, Zahia and FEDLER, F and KLAUSING, H and SEMCHINOVA, OK and STEMMER, J and ADERHOLD, J and GRAUL, J},
  booktitle    = {MRS Fall Meeting 2001, Symposium I : GaN and related alloys, November 26-30, 2001, Boston, Massachusetts, USA},
  language     = {eng},
  pages        = {195},
  title        = {AlGaN/GaN-based MOSHFETs with different gate dielectrics and treatments},
  year         = {2001},
}