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Heterostructure field effect transistor types with novel gate dielectrics.

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Chicago
MISTELE, D, T ROTTER, Zahia Bougrioua, KS ROVER, F FEDLER, H KLAUSING, J STEMMER, OK SEMCHINOVA, J ADERHOLD, and J GRAUL. 2001. “Heterostructure Field Effect Transistor Types with Novel Gate Dielectrics.” Physica Status Solidi A-applied Research 188 (1): 255–258.
APA
MISTELE, D., ROTTER, T., Bougrioua, Z., ROVER, K., FEDLER, F., KLAUSING, H., STEMMER, J., et al. (2001). Heterostructure field effect transistor types with novel gate dielectrics. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 188(1), 255–258.
Vancouver
1.
MISTELE D, ROTTER T, Bougrioua Z, ROVER K, FEDLER F, KLAUSING H, et al. Heterostructure field effect transistor types with novel gate dielectrics. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH. 2001;188(1):255–8.
MLA
MISTELE, D, T ROTTER, Zahia Bougrioua, et al. “Heterostructure Field Effect Transistor Types with Novel Gate Dielectrics.” PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 188.1 (2001): 255–258. Print.
@article{143781,
  author       = {MISTELE, D and ROTTER, T and Bougrioua, Zahia and ROVER, KS and FEDLER, F and KLAUSING, H and STEMMER, J and SEMCHINOVA, OK and ADERHOLD, J and GRAUL, J},
  issn         = {0031-8965},
  journal      = {PHYSICA STATUS SOLIDI A-APPLIED RESEARCH},
  language     = {eng},
  number       = {1},
  pages        = {255--258},
  title        = {Heterostructure field effect transistor types with novel gate dielectrics.},
  volume       = {188},
  year         = {2001},
}

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