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Simultaneous impurity-band and interface conduction in depth-profiled n-GaN epilayers.

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Chicago
MAVROIDIS, C, JJ HARRIS, K LEE, I HARRISON, BJ ANSELL, Zahia Bougrioua, and Ingrid Moerman. 2001. “Simultaneous Impurity-band and Interface Conduction in Depth-profiled n-GaN Epilayers.” Physica Status Solidi B-basic Research 228 (2): 579–583.
APA
MAVROIDIS, C., HARRIS, J., LEE, K., HARRISON, I., ANSELL, B., Bougrioua, Z., & Moerman, I. (2001). Simultaneous impurity-band and interface conduction in depth-profiled n-GaN epilayers. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 228(2), 579–583.
Vancouver
1.
MAVROIDIS C, HARRIS J, LEE K, HARRISON I, ANSELL B, Bougrioua Z, et al. Simultaneous impurity-band and interface conduction in depth-profiled n-GaN epilayers. PHYSICA STATUS SOLIDI B-BASIC RESEARCH. 2001;228(2):579–83.
MLA
MAVROIDIS, C, JJ HARRIS, K LEE, et al. “Simultaneous Impurity-band and Interface Conduction in Depth-profiled n-GaN Epilayers.” PHYSICA STATUS SOLIDI B-BASIC RESEARCH 228.2 (2001): 579–583. Print.
@article{143765,
  author       = {MAVROIDIS, C and HARRIS, JJ and LEE, K and HARRISON, I and ANSELL, BJ and Bougrioua, Zahia and Moerman, Ingrid},
  issn         = {0370-1972},
  journal      = {PHYSICA STATUS SOLIDI B-BASIC RESEARCH},
  language     = {eng},
  number       = {2},
  pages        = {579--583},
  title        = {Simultaneous impurity-band and interface conduction in depth-profiled n-GaN epilayers.},
  volume       = {228},
  year         = {2001},
}

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