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Free-carrier mobility in GaN in the presence of dislocation walls - art. no. 115202.

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Chicago
FARVACQUE, JL, Zahia Bougrioua, and Ingrid Moerman. 2001. “Free-carrier Mobility in GaN in the Presence of Dislocation Walls - Art. No. 115202.” Physical Review B-condensed Matter 6311 (11): 5202.
APA
FARVACQUE, J., Bougrioua, Z., & Moerman, I. (2001). Free-carrier mobility in GaN in the presence of dislocation walls - art. no. 115202. PHYSICAL REVIEW B-CONDENSED MATTER, 6311(11), 5202.
Vancouver
1.
FARVACQUE J, Bougrioua Z, Moerman I. Free-carrier mobility in GaN in the presence of dislocation walls - art. no. 115202. PHYSICAL REVIEW B-CONDENSED MATTER. 2001;6311(11):5202.
MLA
FARVACQUE, JL, Zahia Bougrioua, and Ingrid Moerman. “Free-carrier Mobility in GaN in the Presence of Dislocation Walls - Art. No. 115202.” PHYSICAL REVIEW B-CONDENSED MATTER 6311.11 (2001): 5202. Print.
@article{143675,
  author       = {FARVACQUE, JL and Bougrioua, Zahia and Moerman, Ingrid},
  issn         = {0163-1829},
  journal      = {PHYSICAL REVIEW B-CONDENSED MATTER},
  language     = {eng},
  number       = {11},
  pages        = {5202-+},
  title        = {Free-carrier mobility in GaN in the presence of dislocation walls - art. no. 115202.},
  volume       = {6311},
  year         = {2001},
}

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