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A comparative study of electrochemically formed and vacuum-deposited n-GaAs/Au Schottky barriers using ballistic electron emission microscopy (BEEM).

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Chicago
Forment, Stefaan, Roland Vanmeirhaeghe, An De Vrieze, Katrien Strubbe, and Walter Gomes. 2001. “A Comparative Study of Electrochemically Formed and Vacuum-deposited n-GaAs/Au Schottky Barriers Using Ballistic Electron Emission Microscopy (BEEM).” Semiconductor Science and Technology 16 (12): 975–981.
APA
Forment, Stefaan, Vanmeirhaeghe, R., De Vrieze, A., Strubbe, K., & Gomes, W. (2001). A comparative study of electrochemically formed and vacuum-deposited n-GaAs/Au Schottky barriers using ballistic electron emission microscopy (BEEM). SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 16(12), 975–981.
Vancouver
1.
Forment S, Vanmeirhaeghe R, De Vrieze A, Strubbe K, Gomes W. A comparative study of electrochemically formed and vacuum-deposited n-GaAs/Au Schottky barriers using ballistic electron emission microscopy (BEEM). SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 2001;16(12):975–81.
MLA
Forment, Stefaan, Roland Vanmeirhaeghe, An De Vrieze, et al. “A Comparative Study of Electrochemically Formed and Vacuum-deposited n-GaAs/Au Schottky Barriers Using Ballistic Electron Emission Microscopy (BEEM).” SEMICONDUCTOR SCIENCE AND TECHNOLOGY 16.12 (2001): 975–981. Print.
@article{138057,
  author       = {Forment, Stefaan and Vanmeirhaeghe, Roland and De Vrieze, An and Strubbe, Katrien and Gomes, Walter},
  issn         = {0268-1242},
  journal      = {SEMICONDUCTOR SCIENCE AND TECHNOLOGY},
  language     = {eng},
  number       = {12},
  pages        = {975--981},
  title        = {A comparative study of electrochemically formed and vacuum-deposited n-GaAs/Au Schottky barriers using ballistic electron emission microscopy (BEEM).},
  volume       = {16},
  year         = {2001},
}

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