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Electrochemical formation and properties of n-GaAs/Au and n-GaAs/Ag Schottky barriers: Influence of surface composition upon the barrier height.

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Chicago
De Vrieze, An, Katrien Strubbe, Walter Gomes, S FORMENT, and Roland Vanmeirhaeghe. 2001. “Electrochemical Formation and Properties of n-GaAs/Au and n-GaAs/Ag Schottky Barriers: Influence of Surface Composition Upon the Barrier Height.” Physical Chemistry Chemical Physics 3 (23): 5297–5303.
APA
De Vrieze, A., Strubbe, K., Gomes, W., FORMENT, S., & Vanmeirhaeghe, R. (2001). Electrochemical formation and properties of n-GaAs/Au and n-GaAs/Ag Schottky barriers: Influence of surface composition upon the barrier height. PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 3(23), 5297–5303.
Vancouver
1.
De Vrieze A, Strubbe K, Gomes W, FORMENT S, Vanmeirhaeghe R. Electrochemical formation and properties of n-GaAs/Au and n-GaAs/Ag Schottky barriers: Influence of surface composition upon the barrier height. PHYSICAL CHEMISTRY CHEMICAL PHYSICS. 2001;3(23):5297–303.
MLA
De Vrieze, An, Katrien Strubbe, Walter Gomes, et al. “Electrochemical Formation and Properties of n-GaAs/Au and n-GaAs/Ag Schottky Barriers: Influence of Surface Composition Upon the Barrier Height.” PHYSICAL CHEMISTRY CHEMICAL PHYSICS 3.23 (2001): 5297–5303. Print.
@article{138053,
  author       = {De Vrieze, An and Strubbe, Katrien and Gomes, Walter and FORMENT, S and Vanmeirhaeghe, Roland},
  issn         = {1463-9076},
  journal      = {PHYSICAL CHEMISTRY CHEMICAL PHYSICS},
  language     = {eng},
  number       = {23},
  pages        = {5297--5303},
  title        = {Electrochemical formation and properties of n-GaAs/Au and n-GaAs/Ag Schottky barriers: Influence of surface composition upon the barrier height.},
  volume       = {3},
  year         = {2001},
}

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