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Formation of epitaxial CoSi2 by a Cr or Mo interlayer: Comparison with a Ti interlayer.

(2001) JOURNAL OF APPLIED PHYSICS. 89(4). p.2146-2150
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Chicago
Detavernier, Christophe, Roland Vanmeirhaeghe, Felix Cardon, K MAEX, H BENDER, B BRIJS, and W VANDERVORST. 2001. “Formation of Epitaxial CoSi2 by a Cr or Mo Interlayer: Comparison with a Ti Interlayer.” Journal of Applied Physics 89 (4): 2146–2150.
APA
Detavernier, C., Vanmeirhaeghe, R., Cardon, F., MAEX, K., BENDER, H., BRIJS, B., & VANDERVORST, W. (2001). Formation of epitaxial CoSi2 by a Cr or Mo interlayer: Comparison with a Ti interlayer. JOURNAL OF APPLIED PHYSICS, 89(4), 2146–2150.
Vancouver
1.
Detavernier C, Vanmeirhaeghe R, Cardon F, MAEX K, BENDER H, BRIJS B, et al. Formation of epitaxial CoSi2 by a Cr or Mo interlayer: Comparison with a Ti interlayer. JOURNAL OF APPLIED PHYSICS. 2001;89(4):2146–50.
MLA
Detavernier, Christophe, Roland Vanmeirhaeghe, Felix Cardon, et al. “Formation of Epitaxial CoSi2 by a Cr or Mo Interlayer: Comparison with a Ti Interlayer.” JOURNAL OF APPLIED PHYSICS 89.4 (2001): 2146–2150. Print.
@article{137568,
  author       = {Detavernier, Christophe and Vanmeirhaeghe, Roland and Cardon, Felix and MAEX, K and BENDER, H and BRIJS, B and VANDERVORST, W},
  issn         = {0021-8979},
  journal      = {JOURNAL OF APPLIED PHYSICS},
  language     = {eng},
  number       = {4},
  pages        = {2146--2150},
  title        = {Formation of epitaxial CoSi2 by a Cr or Mo interlayer: Comparison with a Ti interlayer.},
  volume       = {89},
  year         = {2001},
}

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