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Tin doping of silicon for controlling oxygen precipitation and radiation hardness.

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Chicago
CLAEYS, C, E SIMOEN, VB NEIMASH, A KRAITCHINSKII, M KRAS’KO, O PUZENKO, Anja Blondeel, and Paul Clauws. 2001. “Tin Doping of Silicon for Controlling Oxygen Precipitation and Radiation Hardness.” Journal of the Electrochemical Society 148 (12) G738-G745).
APA
CLAEYS, C., SIMOEN, E., NEIMASH, V., KRAITCHINSKII, A., KRAS’KO, M., PUZENKO, O., Blondeel, A., et al. (2001). Tin doping of silicon for controlling oxygen precipitation and radiation hardness. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 148(12) G738-G745).
Vancouver
1.
CLAEYS C, SIMOEN E, NEIMASH V, KRAITCHINSKII A, KRAS’KO M, PUZENKO O, et al. Tin doping of silicon for controlling oxygen precipitation and radiation hardness. JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 2001;148(12) G738-G745).
MLA
CLAEYS, C, E SIMOEN, VB NEIMASH, et al. “Tin Doping of Silicon for Controlling Oxygen Precipitation and Radiation Hardness.” JOURNAL OF THE ELECTROCHEMICAL SOCIETY 148.12) G738-G745 (2001): n. pag. Print.
@article{137555,
  author       = {CLAEYS, C and SIMOEN, E and NEIMASH, VB and KRAITCHINSKII, A and KRAS'KO, M and PUZENKO, O and Blondeel, Anja and Clauws, Paul},
  issn         = {0013-4651},
  journal      = {JOURNAL OF THE ELECTROCHEMICAL SOCIETY},
  language     = {eng},
  number       = {12) G738-G745},
  title        = {Tin doping of silicon for controlling oxygen precipitation and radiation hardness.},
  volume       = {148},
  year         = {2001},
}

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