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Tin doping of silicon for controlling oxygen precipitation and radiation hardness.

C CLAEYS, E SIMOEN, VB NEIMASH, A KRAITCHINSKII, M KRAS'KO, O PUZENKO, Anja Blondeel and Paul Clauws (2001) JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 148(12) G738-G745).
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (original)
publication status
published
subject
journal title
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
J. Electrochem. Soc.
volume
148
issue
12) G738-G745
Web of Science type
Article
Web of Science id
000172166800045
JCR category
MATERIALS SCIENCE, COATINGS & FILMS
JCR impact factor
2.033 (2001)
JCR rank
2/15 (2001)
JCR quartile
1 (2001)
ISSN
0013-4651
language
English
UGent publication?
yes
classification
A1
id
137555
handle
http://hdl.handle.net/1854/LU-137555
date created
2004-01-14 13:37:00
date last changed
2016-12-19 15:38:30
@article{137555,
  author       = {CLAEYS, C and SIMOEN, E and NEIMASH, VB and KRAITCHINSKII, A and KRAS'KO, M and PUZENKO, O and Blondeel, Anja and Clauws, Paul},
  issn         = {0013-4651},
  journal      = {JOURNAL OF THE ELECTROCHEMICAL SOCIETY},
  language     = {eng},
  number       = {12) G738-G745},
  title        = {Tin doping of silicon for controlling oxygen precipitation and radiation hardness.},
  volume       = {148},
  year         = {2001},
}

Chicago
CLAEYS, C, E SIMOEN, VB NEIMASH, A KRAITCHINSKII, M KRAS’KO, O PUZENKO, Anja Blondeel, and Paul Clauws. 2001. “Tin Doping of Silicon for Controlling Oxygen Precipitation and Radiation Hardness.” Journal of the Electrochemical Society 148 (12) G738-G745).
APA
CLAEYS, C., SIMOEN, E., NEIMASH, V., KRAITCHINSKII, A., KRAS’KO, M., PUZENKO, O., Blondeel, A., et al. (2001). Tin doping of silicon for controlling oxygen precipitation and radiation hardness. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 148(12) G738-G745).
Vancouver
1.
CLAEYS C, SIMOEN E, NEIMASH V, KRAITCHINSKII A, KRAS’KO M, PUZENKO O, et al. Tin doping of silicon for controlling oxygen precipitation and radiation hardness. JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 2001;148(12) G738-G745).
MLA
CLAEYS, C, E SIMOEN, VB NEIMASH, et al. “Tin Doping of Silicon for Controlling Oxygen Precipitation and Radiation Hardness.” JOURNAL OF THE ELECTROCHEMICAL SOCIETY 148.12) G738-G745 (2001): n. pag. Print.