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Germanium doping for improved silicon substrates and devices

(2011) JOURNAL OF CRYSTAL GROWTH. 317(1). p.8-15
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Keywords
Semiconducting silicon, Diodes, Germanium silicon alloys, SI1-XGEX EPITAXIAL DEVICES, THERMAL DONOR FORMATION, CZOCHRALSKI SILICON, DIODE CHARACTERISTICS, OXYGEN PRECIPITATION, CZ SILICON, DEFECTS, CRYSTALS, IMPACT, GROWTH, Characterization, Czochralski method, Defects

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Citation

Please use this url to cite or link to this publication:

MLA
Vanhellemont, Jan, et al. “Germanium Doping for Improved Silicon Substrates and Devices.” JOURNAL OF CRYSTAL GROWTH, vol. 317, no. 1, 2011, pp. 8–15.
APA
Vanhellemont, J., Chen, J., Lauwaert, J., Vrielinck, H., Xu, W., Yang, D., … Simoen, E. (2011). Germanium doping for improved silicon substrates and devices. JOURNAL OF CRYSTAL GROWTH, 317(1), 8–15.
Chicago author-date
Vanhellemont, Jan, Jiahe Chen, Johan Lauwaert, Henk Vrielinck, W Xu, Deren Yang, JM Rafi, Hidenori Ohyama, and Eddy Simoen. 2011. “Germanium Doping for Improved Silicon Substrates and Devices.” JOURNAL OF CRYSTAL GROWTH 317 (1): 8–15.
Chicago author-date (all authors)
Vanhellemont, Jan, Jiahe Chen, Johan Lauwaert, Henk Vrielinck, W Xu, Deren Yang, JM Rafi, Hidenori Ohyama, and Eddy Simoen. 2011. “Germanium Doping for Improved Silicon Substrates and Devices.” JOURNAL OF CRYSTAL GROWTH 317 (1): 8–15.
Vancouver
1.
Vanhellemont J, Chen J, Lauwaert J, Vrielinck H, Xu W, Yang D, et al. Germanium doping for improved silicon substrates and devices. JOURNAL OF CRYSTAL GROWTH. 2011;317(1):8–15.
IEEE
[1]
J. Vanhellemont et al., “Germanium doping for improved silicon substrates and devices,” JOURNAL OF CRYSTAL GROWTH, vol. 317, no. 1, pp. 8–15, 2011.
@article{1320296,
  author       = {Vanhellemont, Jan and Chen, Jiahe and Lauwaert, Johan and Vrielinck, Henk and Xu, W and Yang, Deren and Rafi, JM and Ohyama, Hidenori and Simoen, Eddy},
  issn         = {0022-0248},
  journal      = {JOURNAL OF CRYSTAL GROWTH},
  keywords     = {Semiconducting silicon,Diodes,Germanium silicon alloys,SI1-XGEX EPITAXIAL DEVICES,THERMAL DONOR FORMATION,CZOCHRALSKI SILICON,DIODE CHARACTERISTICS,OXYGEN PRECIPITATION,CZ SILICON,DEFECTS,CRYSTALS,IMPACT,GROWTH,Characterization,Czochralski method,Defects},
  language     = {eng},
  location     = {Brasov, Romania},
  number       = {1},
  pages        = {8--15},
  title        = {Germanium doping for improved silicon substrates and devices},
  url          = {http://dx.doi.org/10.1016/j.jcrysgro.2010.11.024},
  volume       = {317},
  year         = {2011},
}

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