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Extension of a multilayer interconnection technology in MCM-Si with opto-electronic facilities.

Herbert De Pauw UGent, Herbert De Smet UGent, Jan Vanfleteren UGent, Jo Lernout and André Van Calster UGent (2000) MICROELECTRONICS RELIABILITY. 40(1). p.163-170
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (original)
publication status
published
subject
journal title
MICROELECTRONICS RELIABILITY
Microelectron. Reliab.
volume
40
issue
1
pages
163-170 pages
Web of Science type
Article
Web of Science id
000084915600017
ISSN
0026-2714
language
English
UGent publication?
yes
classification
A1
id
129659
handle
http://hdl.handle.net/1854/LU-129659
date created
2004-01-14 13:36:00
date last changed
2016-12-19 15:38:53
@article{129659,
  author       = {De Pauw, Herbert and De Smet, Herbert and Vanfleteren, Jan and Lernout, Jo and Van Calster, Andr{\'e}},
  issn         = {0026-2714},
  journal      = {MICROELECTRONICS RELIABILITY},
  language     = {eng},
  number       = {1},
  pages        = {163--170},
  title        = {Extension of a multilayer interconnection technology in MCM-Si with opto-electronic facilities.},
  volume       = {40},
  year         = {2000},
}

Chicago
De Pauw, Herbert, Herbert De Smet, Jan Vanfleteren, Jo Lernout, and André Van Calster. 2000. “Extension of a Multilayer Interconnection Technology in MCM-Si with Opto-electronic Facilities.” Microelectronics Reliability 40 (1): 163–170.
APA
De Pauw, H., De Smet, H., Vanfleteren, J., Lernout, J., & Van Calster, A. (2000). Extension of a multilayer interconnection technology in MCM-Si with opto-electronic facilities. MICROELECTRONICS RELIABILITY, 40(1), 163–170.
Vancouver
1.
De Pauw H, De Smet H, Vanfleteren J, Lernout J, Van Calster A. Extension of a multilayer interconnection technology in MCM-Si with opto-electronic facilities. MICROELECTRONICS RELIABILITY. 2000;40(1):163–70.
MLA
De Pauw, Herbert, Herbert De Smet, Jan Vanfleteren, et al. “Extension of a Multilayer Interconnection Technology in MCM-Si with Opto-electronic Facilities.” MICROELECTRONICS RELIABILITY 40.1 (2000): 163–170. Print.