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Quantifying the smoothing of GaN epilayers in MOVPE growth by in-situ laser reflectometry.

A STAFFORD, S IRVINE, Zahia Bougrioua, Koen Jacobs, Ingrid Moerman (UGent) , EJ THRUSH and L CONSIDINE
(2000) The Tenth International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-X), 5-9 June 2000, Sapporo, Japan. p.84-85
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MLA
STAFFORD, A, S IRVINE, Zahia Bougrioua, et al. “Quantifying the Smoothing of GaN Epilayers in MOVPE Growth by In-situ Laser Reflectometry.” The Tenth International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-X), 5-9 June 2000, Sapporo, Japan. 2000. 84–85. Print.
APA
STAFFORD, A., IRVINE, S., Bougrioua, Z., Jacobs, K., Moerman, I., THRUSH, E., & CONSIDINE, L. (2000). Quantifying the smoothing of GaN epilayers in MOVPE growth by in-situ laser reflectometry. The Tenth International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-X), 5-9 June 2000, Sapporo, Japan (pp. 84–85).
Chicago author-date
STAFFORD, A, S IRVINE, Zahia Bougrioua, Koen Jacobs, Ingrid Moerman, EJ THRUSH, and L CONSIDINE. 2000. “Quantifying the Smoothing of GaN Epilayers in MOVPE Growth by In-situ Laser Reflectometry.” In The Tenth International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-X), 5-9 June 2000, Sapporo, Japan, 84–85.
Chicago author-date (all authors)
STAFFORD, A, S IRVINE, Zahia Bougrioua, Koen Jacobs, Ingrid Moerman, EJ THRUSH, and L CONSIDINE. 2000. “Quantifying the Smoothing of GaN Epilayers in MOVPE Growth by In-situ Laser Reflectometry.” In The Tenth International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-X), 5-9 June 2000, Sapporo, Japan, 84–85.
Vancouver
1.
STAFFORD A, IRVINE S, Bougrioua Z, Jacobs K, Moerman I, THRUSH E, et al. Quantifying the smoothing of GaN epilayers in MOVPE growth by in-situ laser reflectometry. The Tenth International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-X), 5-9 June 2000, Sapporo, Japan. 2000. p. 84–5.
IEEE
[1]
A. STAFFORD et al., “Quantifying the smoothing of GaN epilayers in MOVPE growth by in-situ laser reflectometry.,” in The Tenth International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-X), 5-9 June 2000, Sapporo, Japan, 2000, pp. 84–85.
@inproceedings{129458,
  author       = {STAFFORD, A and IRVINE, S and Bougrioua, Zahia and Jacobs, Koen and Moerman, Ingrid and THRUSH, EJ and CONSIDINE, L},
  booktitle    = {The Tenth International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-X), 5-9 June 2000, Sapporo, Japan},
  language     = {eng},
  pages        = {84--85},
  title        = {Quantifying the smoothing of GaN epilayers in MOVPE growth by in-situ laser reflectometry.},
  year         = {2000},
}