Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry.
(2000) JOURNAL OF CRYSTAL GROWTH. 221. p.142-148
Please use this url to cite or link to this publication:
http://hdl.handle.net/1854/LU-129451
- author
- A STAFFORD, S IRVINE, Zahia Bougrioua, Koen Jacobs, Ingrid Moerman UGent, EJ THRUSH and L CONSIDINE
- organization
- year
- 2000
- type
- journalArticle (original)
- publication status
- published
- subject
- journal title
- JOURNAL OF CRYSTAL GROWTH
- J. Cryst. Growth
- volume
- 221
- pages
- 142-148 pages
- Web of Science type
- Article
- Web of Science id
- 000166501400025
- ISSN
- 0022-0248
- language
- English
- UGent publication?
- yes
- classification
- A1
- id
- 129451
- handle
- http://hdl.handle.net/1854/LU-129451
- date created
- 2004-01-14 13:36:00
- date last changed
- 2016-12-19 15:37:49
@article{129451,
author = {STAFFORD, A and IRVINE, S and Bougrioua, Zahia and Jacobs, Koen and Moerman, Ingrid and THRUSH, EJ and CONSIDINE, L},
issn = {0022-0248},
journal = {JOURNAL OF CRYSTAL GROWTH},
language = {eng},
pages = {142--148},
title = {Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry.},
volume = {221},
year = {2000},
}
- Chicago
- STAFFORD, A, S IRVINE, Zahia Bougrioua, Koen Jacobs, Ingrid Moerman, EJ THRUSH, and L CONSIDINE. 2000. “Quantifying the Smoothing of GaN Epilayer Growth by in Situ Laser Interferometry.” Journal of Crystal Growth 221: 142–148.
- APA
- STAFFORD, A., IRVINE, S., Bougrioua, Z., Jacobs, K., Moerman, I., THRUSH, E., & CONSIDINE, L. (2000). Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry. JOURNAL OF CRYSTAL GROWTH, 221, 142–148.
- Vancouver
- 1.STAFFORD A, IRVINE S, Bougrioua Z, Jacobs K, Moerman I, THRUSH E, et al. Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry. JOURNAL OF CRYSTAL GROWTH. 2000;221:142–8.
- MLA
- STAFFORD, A, S IRVINE, Zahia Bougrioua, et al. “Quantifying the Smoothing of GaN Epilayer Growth by in Situ Laser Interferometry.” JOURNAL OF CRYSTAL GROWTH 221 (2000): 142–148. Print.