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Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry.

(2000) JOURNAL OF CRYSTAL GROWTH. 221. p.142-148
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MLA
STAFFORD, A, S IRVINE, Zahia Bougrioua, et al. “Quantifying the Smoothing of GaN Epilayer Growth by in Situ Laser Interferometry.” JOURNAL OF CRYSTAL GROWTH 221 (2000): 142–148. Print.
APA
STAFFORD, A., IRVINE, S., Bougrioua, Z., Jacobs, K., Moerman, I., THRUSH, E., & CONSIDINE, L. (2000). Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry. JOURNAL OF CRYSTAL GROWTH, 221, 142–148.
Chicago author-date
STAFFORD, A, S IRVINE, Zahia Bougrioua, Koen Jacobs, Ingrid Moerman, EJ THRUSH, and L CONSIDINE. 2000. “Quantifying the Smoothing of GaN Epilayer Growth by in Situ Laser Interferometry.” Journal of Crystal Growth 221: 142–148.
Chicago author-date (all authors)
STAFFORD, A, S IRVINE, Zahia Bougrioua, Koen Jacobs, Ingrid Moerman, EJ THRUSH, and L CONSIDINE. 2000. “Quantifying the Smoothing of GaN Epilayer Growth by in Situ Laser Interferometry.” Journal of Crystal Growth 221: 142–148.
Vancouver
1.
STAFFORD A, IRVINE S, Bougrioua Z, Jacobs K, Moerman I, THRUSH E, et al. Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry. JOURNAL OF CRYSTAL GROWTH. 2000;221:142–8.
IEEE
[1]
A. STAFFORD et al., “Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry.,” JOURNAL OF CRYSTAL GROWTH, vol. 221, pp. 142–148, 2000.
@article{129451,
  author       = {STAFFORD, A and IRVINE, S and Bougrioua, Zahia and Jacobs, Koen and Moerman, Ingrid and THRUSH, EJ and CONSIDINE, L},
  issn         = {0022-0248},
  journal      = {JOURNAL OF CRYSTAL GROWTH},
  language     = {eng},
  pages        = {142--148},
  title        = {Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry.},
  volume       = {221},
  year         = {2000},
}

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