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Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry.

A STAFFORD, S IRVINE, Zahia Bougrioua, Koen Jacobs, Ingrid Moerman UGent, EJ THRUSH and L CONSIDINE (2000) JOURNAL OF CRYSTAL GROWTH. 221. p.142-148
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (original)
publication status
published
subject
journal title
JOURNAL OF CRYSTAL GROWTH
J. Cryst. Growth
volume
221
pages
142-148 pages
Web of Science type
Article
Web of Science id
000166501400025
ISSN
0022-0248
language
English
UGent publication?
yes
classification
A1
id
129451
handle
http://hdl.handle.net/1854/LU-129451
date created
2004-01-14 13:36:00
date last changed
2016-12-19 15:37:49
@article{129451,
  author       = {STAFFORD, A and IRVINE, S and Bougrioua, Zahia and Jacobs, Koen and Moerman, Ingrid and THRUSH, EJ and CONSIDINE, L},
  issn         = {0022-0248},
  journal      = {JOURNAL OF CRYSTAL GROWTH},
  language     = {eng},
  pages        = {142--148},
  title        = {Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry.},
  volume       = {221},
  year         = {2000},
}

Chicago
STAFFORD, A, S IRVINE, Zahia Bougrioua, Koen Jacobs, Ingrid Moerman, EJ THRUSH, and L CONSIDINE. 2000. “Quantifying the Smoothing of GaN Epilayer Growth by in Situ Laser Interferometry.” Journal of Crystal Growth 221: 142–148.
APA
STAFFORD, A., IRVINE, S., Bougrioua, Z., Jacobs, K., Moerman, I., THRUSH, E., & CONSIDINE, L. (2000). Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry. JOURNAL OF CRYSTAL GROWTH, 221, 142–148.
Vancouver
1.
STAFFORD A, IRVINE S, Bougrioua Z, Jacobs K, Moerman I, THRUSH E, et al. Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry. JOURNAL OF CRYSTAL GROWTH. 2000;221:142–8.
MLA
STAFFORD, A, S IRVINE, Zahia Bougrioua, et al. “Quantifying the Smoothing of GaN Epilayer Growth by in Situ Laser Interferometry.” JOURNAL OF CRYSTAL GROWTH 221 (2000): 142–148. Print.