Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry.
- Author
- A STAFFORD, S IRVINE, Zahia Bougrioua, Koen Jacobs, Ingrid Moerman (UGent) , EJ THRUSH and L CONSIDINE
- Organization
Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-129451
- MLA
- STAFFORD, A, S IRVINE, Zahia Bougrioua, et al. “Quantifying the Smoothing of GaN Epilayer Growth by in Situ Laser Interferometry.” JOURNAL OF CRYSTAL GROWTH 221 (2000): 142–148. Print.
- APA
- STAFFORD, A., IRVINE, S., Bougrioua, Z., Jacobs, K., Moerman, I., THRUSH, E., & CONSIDINE, L. (2000). Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry. JOURNAL OF CRYSTAL GROWTH, 221, 142–148.
- Chicago author-date
- STAFFORD, A, S IRVINE, Zahia Bougrioua, Koen Jacobs, Ingrid Moerman, EJ THRUSH, and L CONSIDINE. 2000. “Quantifying the Smoothing of GaN Epilayer Growth by in Situ Laser Interferometry.” Journal of Crystal Growth 221: 142–148.
- Chicago author-date (all authors)
- STAFFORD, A, S IRVINE, Zahia Bougrioua, Koen Jacobs, Ingrid Moerman, EJ THRUSH, and L CONSIDINE. 2000. “Quantifying the Smoothing of GaN Epilayer Growth by in Situ Laser Interferometry.” Journal of Crystal Growth 221: 142–148.
- Vancouver
- 1.STAFFORD A, IRVINE S, Bougrioua Z, Jacobs K, Moerman I, THRUSH E, et al. Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry. JOURNAL OF CRYSTAL GROWTH. 2000;221:142–8.
- IEEE
- [1]A. STAFFORD et al., “Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry.,” JOURNAL OF CRYSTAL GROWTH, vol. 221, pp. 142–148, 2000.
@article{129451,
author = {STAFFORD, A and IRVINE, S and Bougrioua, Zahia and Jacobs, Koen and Moerman, Ingrid and THRUSH, EJ and CONSIDINE, L},
issn = {0022-0248},
journal = {JOURNAL OF CRYSTAL GROWTH},
language = {eng},
pages = {142--148},
title = {Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry.},
volume = {221},
year = {2000},
}